PAD DESIGN FOR BACKSIDE ILLUMINATED IMAGE SENSOR
First Claim
1. An image sensor device, comprising:
- a device substrate having a pixel region and a circuit region;
a pixel array formed on the device substrate and within the pixel region;
a control circuit formed on the device substrate and within the circuit region;
an interconnect structure formed over the pixel array and the control circuit, the interconnect structure electrically connecting the control circuit to the pixel array; and
a conducting layer formed on the interconnect structure;
wherein the conducting layer comprises a portion formed in the pixel region, the portion serving as a pad.
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Accused Products
Abstract
A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
171 Citations
20 Claims
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1. An image sensor device, comprising:
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a device substrate having a pixel region and a circuit region; a pixel array formed on the device substrate and within the pixel region; a control circuit formed on the device substrate and within the circuit region; an interconnect structure formed over the pixel array and the control circuit, the interconnect structure electrically connecting the control circuit to the pixel array; and a conducting layer formed on the interconnect structure; wherein the conducting layer comprises a portion formed in the pixel region, the portion serving as a pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An image sensor device, comprising:
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a device substrate having a pixel region and a circuit region; a pixel array formed on the device substrate within the pixel region; a control circuit formed on the device substrate within the circuit region; an interconnect structure formed over the pixel array and the control circuit, electrically connecting the control circuit to the pixel array; a conducting layer formed on the interconnect structure; a carrier substrate overlying the conducting layer; and a conductive via passing through the carrier substrate and electrically connected to the conducting layer. wherein the conducting layer comprises a solid portion formed in the pixel region, serving as a pad. - View Dependent Claims (11, 12, 13, 14)
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15. A method of fabricating a semiconductor image sensor device, said method comprising:
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forming a pixel array on a device substrate the pixel array defining a pixel region of the device substrate; forming a control circuit on the device substrate the control circuit defining a circuit region of the device substrate; forming an interconnect structure over the pixel array and the control circuit, electrically connecting the control circuit to the pixel array; and forming a conducting layer on the interconnect structure; wherein the conducting layer comprises a portion formed in the pixel region, serving as a pad. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification