CODING TECHNIQUES FOR IMPROVING THE SENSE MARGIN IN CONTENT ADDRESSABLE MEMORIES

• US 20100214811A1
• Filed: 02/24/2009
• Published: 08/26/2010
• Est. Priority Date: 02/24/2009
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Franceschini, Michele M., Rajendran, Bipin, Lastras, Luis A., Lam, Chung H.
• Granted Patent: US 7,881,089 B2
• Time in Patent Office: Days
• US Class Current: 365/49.170
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 15/00 Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
• CPC Class Codes: G11C 15/02 using magnetic elements
• CPC Class Codes: G11C 15/046 using non-volatile storage elements
• CPC Class Codes: G11C 7/1006 Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Abstract

A content addressable memory using encoded data words and search words, and techniques for operating such device. In one embodiment, the data word is transformed into a code word guaranteeing a mismatch of at least two code word bits of different binary values during the memory search operation when the data word does not match a search word. In another embodiment, the search word is transformed into a search code such that the Hamming distance between the code word and the search code is greater than a given threshold when there is a mismatch of at least one bit between the data word and the search word.

Claims

1. A method for operating content addressable memory, the method comprising:

providing a plurality of memory cells in parallel circuit, the memory cells being electrically coupled to a match line, the match line configured to receive a collective current from the memory cells during a memory search operation;

receiving a data word of bit length L for storage in the memory cells;

transforming the data word into a code word of bit length greater than L such that at least one code word bit in the code word depends on at least two data word bits in the data word, the code word guaranteeing a mismatch of at least two code word bits of different binary values during the memory search operation when the data word does not match a search word; and

storing the code word in the memory cells.

2. The method of claim 1, wherein the code word is determined from a set of code words having a constant Hamming weight.

3. The method of claim 1, wherein the code word includes the data word and a count of the number of zeros in the data word, the count encoded using a binary numeral system.

4. The method of claim 1, further comprising:

wherein the data word includes a plurality of digits represented as a first binary value and a second binary value; and

wherein the code word includes the data word and an encoded number of occurrences of the first binary value in the data word, the encoded number of occurrences of the first binary value is determined from a set of encoded numbers having a constant Hamming weight.

5. The method of claim 1, further comprising:

wherein the data word includes a plurality of digits represented as a first binary value and a second binary value; and

wherein the code word includes the data word, an encoded number of occurrences of the first binary value in the data word, and a bitwise complement of the encoded number of occurrences of the first binary value in the data word.

6. The method of claim 1, further comprising:

creating at least d low resistance paths along the parallel circuit, where d is an positive integer.

7. The method of claim 6, wherein the code word is selected from a set of binary vectors with the same Hamming weight, the binary vectors having a Hamming distance that is at least 2d.

8. The method of claim 1,

wherein the code word is configured to guarantee that the match current passing through at least one of the memory cells during the search operation is within a highest possible current range of at least two current ranges if the data word does not match the search word during the memory search operation.

9. The method of claim 1, further comprising:

receiving at the content addressable memory the search word of length L for comparison against the data word during the search operation;

transforming at the content addressable memory the search word into a search code for comparison against the code word during the search operation; and

determining if the collective current from the memory cells is below a threshold value during the memory search operation.

10. The method of claim 9, further comprising:

wherein each memory cell includes a memory element electrically coupled to an access device in series circuit, the memory element configured to store binary data as one of two complementary memory element resistances; and

biasing the access device of each memory cell such that the effective resistance of the access device is one of two complementary access device resistances during the memory search operation.

11. A method for operating content addressable memory, the method comprising:

providing a plurality of memory cells in parallel circuit, the memory cells being electrically coupled to a match line, the match line configured to receive a collective current from the memory cells during a memory search operation;

receiving a data word of bit length L for storage in the memory cells;

transforming the data word into a code word of bit length M, where M is greater than L, such that at least one code word bit depends on at least two data word bits;

storing the code word in the memory cells;

receiving a search word of bit length L for comparison against the data word during the memory search operation;

transforming the search word into a search code of bit length M such that the Hamming distance between the code word and the search code is greater than a hamming threshold when there is a mismatch of at least one bit between the data word and the search word; and

indicating a match if the collective current is above a bottom current threshold and below a top current threshold.

12. A content addressable memory device comprising:

a plurality of memory cells in parallel circuit, the memory cells being electrically coupled to a match line, the match line configured to receive a collective current from the memory cells during a memory search operation;

a receiving unit configured to receive a data word of length L; and

an encoding unit configured to transform the data word into a code word of length greater than L for storage in the memory cells, wherein at least one of the code word bits depends on at least two of the data word bits, the code word guaranteeing a mismatch of at least two code word bits of different binary values during the memory search operation when the data word does not match a search word.

13. The content addressable memory device of claim 12, wherein code word is selected from a set of code words having a constant Hamming weight.

14. The content addressable memory device of claim 12, further comprising:

wherein the data word includes a plurality of digits represented as a first binary value and a second binary value; and

wherein the code word includes the data word and an encoded number of occurrences of the first binary value in the data word, the encoded number of occurrences of the first binary value is determined from a set of encoded numbers having a constant Hamming weight.

15. The content addressable memory device of claim 12, further comprising:

wherein the data word includes a plurality of digits represented as a first binary value and a second binary value; and

wherein the code word includes the data word, an encoded number of occurrences of the first binary value in the data word, and a bitwise complement of the encoded number of occurrences of the first binary value in the data word.

16. The content addressable memory device of claim 12, wherein the encoding unit ensures that when the data word does not match the search word during the search operation, at least d low resistance paths along the parallel circuit are created.

17. The content addressable memory device of claim 16, wherein the code word is selected from a set of binary vectors with the same Hamming weight, the binary vectors having a Hamming distance that is at least 2d.

18. The device of claim 12, wherein the code word includes the data word and a count of the number of zeros in the data word, the count encoded using a binary numeral system.

19. The content addressable memory device of claim 12, further comprising:

wherein the receiving unit is further configured to receive the search word of length L for comparison against the data word during the search operation;

wherein the encoding unit is further configured to transform the search word into a search code for comparison against the code word during the search operation; and

a match unit configured to measure if the collective current from the memory cells is below a threshold value during the search operation.

20. The content addressable memory device of claim 19, further comprising:

wherein each memory cell includes a memory element electrically coupled to an access device in series circuit, the memory element configured to store binary data as one of two complementary resistances; and

a biasing unit configured to bias the access device of each memory cell such that the effective resistance of the access device is one of two device resistances during the search operation.

21. The content addressable memory device of claim 20, wherein the access devices are electrically coupled to search lines such that a plurality of the access devices are electrically coupled to a single search line.

22. The content addressable memory device of claim 19, wherein the match unit is further configured to indicate a memory location of the memory cells if the collective current is below the threshold value during the search operation.

23. The content addressable memory device of claim 12, wherein the code word is configured to guarantee that the match current passing through at least one of the memory cells during the search operation is within a highest possible current range of at least two current ranges during the search operation if the data word does not match the search word.

24. A content addressable memory device comprising:

a plurality of memory cells in parallel circuit, the memory cells being electrically coupled to a match line, the match line configured to receive a collective current from the memory cells during a memory search operation;

a receiving unit configured to receive a data word of length L; and

an encoding unit configured to transform the data word into a code word of length greater than L for storage in the memory cells, wherein at least one code word bit depends on at least two data word bits, the code word is configured to increase the current passing through the match line during the memory search operation when the data word does not match a search word.

25. A computer program embodied in computer readable memory comprising:

program codes coupled to the computer readable memory for operating computer memory, the computer memory including a plurality of memory cells in parallel circuit, the memory cells being electrically coupled to a match line, the match line configured to receive a collective current from the memory cells during a memory search operation, the computer codes configured to cause the computer program to;

receive a data word of bit length L for storage in the memory cells;

transform the data word into a code word of length greater than L, wherein at least one bit of the code word depends on at least two bits of the data word, the code word guaranteeing a mismatch of at least two code word bits of different binary values during the memory search operation when the data word does not match a search word; and

store the code word in the memory cells.