Memory module having a plurality of phase change memories, buffer RAM and nand flash memory

• US 20100214813A1
• Filed: 01/21/2010
• Published: 08/26/2010
• Est. Priority Date: 02/26/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Jangseok, Lee, Dongyang
• Granted Patent: US 8,270,226 B2
• Time in Patent Office: Days
• US Class Current: 365/51
• CPC Class Codes: G11C 11/005 comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
• CPC Class Codes: G11C 13/00 Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 2207/2245 Memory devices with an internal cache buffer
• CPC Class Codes: G11C 5/04 Supports for storage elements , e.g. memory modules; Mounting or fixing of storage elements on such supports
• CPC Class Codes: G11C 5/141 Battery and back-up supplies
• CPC Class Codes: G11C 7/22 Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management

Abstract

A memory module comprises a plurality of main memories; a buffer RAM configured to temporarily store data being provided to or read from the main memories and to perform a buffer function between an external device and the main memories; and a NAND flash memory configured to store data of the buffer RAM during an interruption of power being supplied to the buffer RAM.

Claims

1. A memory module comprising:

a plurality of main memories;

a buffer RAM configured to temporarily store data being provided to or read from the plurality of main memories and to perform a buffer function between an external device and the plurality of main memories; and

a NAND flash memory configured to store data of the buffer RAM during an interruption of power being supplied to the buffer RAM.

2. The memory module of claim 1, wherein the buffer RAM includes a power detecting circuit which is configured to sense a power supply voltage of the memory module and to generate a flag signal if the power being supplied to the buffer RAM is interrupted.

3. The memory module of claim 2, wherein the NAND flash memory is configured to perform a backup operation by storing the data of the buffer RAM based on the flag signal.

4. The memory module of claim 3, wherein the NAND flash memory is configured to transfer the data stored in the NAND flash memory to the buffer RAM, and erase the data stored in the NAND flash memory after power being supplied to the memory module is restored.

5. The memory module of claim 1, further comprising a backup power supply configured to supply a power during an interruption of power to the memory module.

6. The memory module of claim 1, wherein the buffer RAM is configured to perform a bypass function by passing data read during a read operation directly into the external device without storing the data read during the read operation in the buffer RAM.

7. The memory module of claim 1, wherein the buffer RAM is configured to store a boot code and the boot code is not stored in the plurality of main memories.

8. The memory module of claim 1, wherein the plurality of main memories are each formed of one selected from a group of PRAM, MRAM, FRAM, and RRAM.

9. A memory device, the memory device comprising:

one or more memory sets, each of the one or more memory sets including the memory module of claim 1, wherein for each of the one or more memory sets, the plurality of main memories is a plurality of phase change memories, and the buffer RAM is connected with the external device via a data line.

10. The memory module of claim 9, wherein the data line is a shared line connected to the buffer RAMs of each of the one or more memory sets, respectively.

11. The memory module of claim 9, further comprising a power detecting circuit which is configured to sense a power supply voltage of the memory module, and to generate a flag signal if power being supplied to the buffer RAM is interrupted.

12. The memory module of claim 7, wherein the NAND flash memory is configured to store the data of the buffer RAM based on the flag signal.

13. The memory module of claim 7, wherein the NAND flash memory is configured to transfer the data stored in the NAND flash memory to the buffer RAM, and erase the data stored in the NAND flash memory after power being supplied to the memory module is restored.

14. The memory module of claim 11, further comprising a backup power supply configured to supply power to the memory module during an interruption of power being supplied to the memory module.

15. The memory module of claim 7, wherein the plurality of phase change memories is stacked on the buffer RAM.