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SEMICONDUCTOR OPTOELECTRONIC DEVICES AND METHODS FOR MAKING SEMICONDUCTOR OPTOELECTRONIC DEVICES

  • US 20100218819A1
  • Filed: 10/06/2008
  • Published: 09/02/2010
  • Est. Priority Date: 10/05/2007
  • Status: Abandoned Application
First Claim
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1. A semiconductor-based optoelectronic device having an n-type layer and a p-type layer, together forming a p-n junction, the device further including:

  • at least one contact region;

    at least one light-receiving or light-transmitting region;

    a window layer formed over the n-type layer or the p-type layer, at least at said light-receiving or light-transmitting region, the window layer providing, in operation, at least partial transmission of incident or generated light through to or from the n-type layer or p-type layer, and promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or at least partial reflection of minority carriers in the n-type or p-type layer towards the p-n junction,wherein the device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device.

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