SEMICONDUCTOR OPTOELECTRONIC DEVICES AND METHODS FOR MAKING SEMICONDUCTOR OPTOELECTRONIC DEVICES

• US 20100218819A1
• Filed: 10/06/2008
• Published: 09/02/2010
• Est. Priority Date: 10/05/2007
• Status: Abandoned Application

• Current Assignee: University Court of the University of Glasgow (University of Glasgow)
• Original Assignee: University Court of the University of Glasgow (University of Glasgow)
• Inventors: Stanley, Colin, Farmer, Corrie
• Application Number:
  US12/681,390
• Publication Number:
  US 20100218819A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/02167 for solar cells
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/0693 the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A semiconductor-based optoelectronic device such as a solar cell has an n-type layer and a p-type layer, together forming a p-n junction. Contact regions are formed on the device, with light-receiving regions between contact regions. A window layer is formed over the n-type layer or the p-type layer at the light-receiving region, the window layer promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or reflection of minority carriers in the n-type or p-type layer towards the p-n junction. The device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device. For GaAs-based devices the window layer may be Al0.9Ga0.1As and the window protection layer may be GaAs. Additionally, an AlAs etch stop layer may be provided over the window protection layer.

Claims

1. A semiconductor-based optoelectronic device having an n-type layer and a p-type layer, together forming a p-n junction, the device further including:

at least one contact region;

at least one light-receiving or light-transmitting region;

a window layer formed over the n-type layer or the p-type layer, at least at said light-receiving or light-transmitting region, the window layer providing, in operation, at least partial transmission of incident or generated light through to or from the n-type layer or p-type layer, and promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or at least partial reflection of minority carriers in the n-type or p-type layer towards the p-n junction,

wherein the device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device.

2. A device according to claim 1 wherein the window protection layer provides protection against degradation by oxidation and/or hydrolysis of the window layer.

3. A device according to claim 1 wherein the device further includes an anti-reflection coating formed at least at said light receiving region, the anti-reflection coating being formed over the window protection layer.

4. A device according to claim 1 wherein the thickness of the window layer is at least 5 nm.

5. A device according to claim 1 wherein the thickness of the window layer is at most 1.5 μ

m.

6. A device according to claim 1 wherein the thickness of the window protection layer is at least 1 ML.

7. A device according to claim 1 wherein the thickness of the window protection layer is at most 0.5 μ

m.

8. A device according to claim 1 wherein the contact region includes a layer of semiconducting contact material formed over the window protection layer, with an etch-stop layer sandwiched between the layer of semiconducting contact material and window protection layer.

9. A device according to claim 8 wherein the etch-stop layer is formed of a material having an etching rate of at least 10 times slower than an etching rate of the semiconducting contact material under the same predetermined etchant conditions.

10. A device according to claim 8 wherein the etch stop layer comprises group III-V semiconducting material.

11. A device according to claim 8 wherein the etch stop layer comprises Al_xGa_1-xAs.

12. A device according to claim 8 wherein the etch stop layer comprises AlAs.

13. A device according to claim 8 wherein the etch-stop layer has a thickness of at most 10 nm.

14. A device according to claim 8 wherein the thickness of the semiconducting contact material layer is at least 5 nm.

15. A device according to claim 1 wherein the device includes a substrate and the n-type and p-type layers are epitaxial layers, the device optionally including intermediate layers between the substrate and the n-type or p-type layers.

16. A device according to claim 1 wherein the n-type layer and p-type layer are each based on group III-V semiconducting material.

17. A device according to claim 16 wherein the III-V group semiconducting material is Ga—

As based material.

18. A device according to claim 1 wherein In is substantially absent from the window layer.

19. A device according to claim 1 wherein the window layer comprises Al_xGa_1-xAs in which x is greater than 0 and at most 1.

20. A device according to claim 19 wherein x is at least 0.5.

21. A device according to claim 19 wherein x is at least 0.85.

22. A device according to claim 1 wherein a band gap energy at the Γ

-point of the window layer is at least 2.7 eV.

23. A device according to claim 1 wherein a band gap energy of the window protection layer is at most 2.6 eV.

24. A device according to claim 1 wherein the window protection layer comprises Ga—

As based material.

25. A device according to claim 1 wherein the window protection layer comprises GaAs.

26. A device according to claim 1 wherein the optoelectronic device is a photovoltaic device.

27. A semiconductor-based optoelectronic device having an n-type layer and a p-type layer, together forming a p-n junction, the device further including:

at least one contact region;

at least one light-receiving or light-transmitting region;

a window layer formed over the n-type layer or the p-type layer, at least at said light-receiving or light-transmitting region, the window layer providing, in operation, at least partial transmission of incident or generated light through to or from the n-type layer or p-type layer, and promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or at least partial reflection of minority carriers in the n-type or p-type layer towards the p-n junction,

wherein the contact region includes a layer of semiconducting contact material, with an etch-stop layer sandwiched between the semiconducting contact material and the window layer.

28. A method of manufacturing a semiconductor-based optoelectronic device, the device having an n-type layer and a p-type layer, together forming a p-n junction, the method including the steps:

forming a window layer over the n-type layer or the p-type layer;

forming a window protection layer over the window layer;

optionally, forming an etch-stop layer over the window protection layer;

forming a layer of semiconducting contact material over the window protection layer or over the etch-stop layer, if present;

etching the layer of semiconducting contact material under a semiconducting contact material etching condition in at least one region corresponding to a light-receiving or light-transmitting region of the final device, to leave at least one light-receiving or light-transmitting region and at least one contact region, the etching stopping at the window protection layer or at the etch-stop layer, if present; and

optionally, removing the etch-stop layer, if present, at least from the light-receiving or light-transmitting region.

29. A method according to claim 28 wherein the window protection layer or the etch-stop layer has an etching rate under said semiconducting contact material etching condition of at least 10 times slower than the semiconductor contact material.

30. A method according to claim 28 wherein the semiconducting contact material etching condition includes the use of an etchant comprising an oxidising agent for oxidising the semiconducting contact material and an agent for dissolving the oxidised semiconducting contact material.

31. A method according to claim 30 wherein the etchant is selected from the group consisting of:

(a) citric acid;

hydrogen peroxide (C₆H₈O₇;

H₂O₂) solution;

(b) C₆H₈O₇(citric acid);

K₃C₆H_SO₇ (potassium citrate);

H₂O₂-based;

(c) C₆H₈O₇(citric acid);

NH₄OH;

H₂O₂-based;

(d) C₄H₆O₄(succinic acid);

H₂O₂-based, optionally pH-adjusted;

(e) C₄H₆O₆(tartaric acid)-based;

(f) C₂H₂O₄(oxalic acid)-based;

(g) NH₄OH;

H₂O₂-based, pH-adjusted; and

(h) HF-, HCl-, H₂SO₄-, R₃PO₄-, HNO₃-, HI-, H₃PO₂-, or NH₄OH-based solution.

32. A method according to claim 28 wherein the etch-stop layer is removed under an etch-stop layer etching condition, different from the semiconducting contact material etching condition.

33. A method according to claim 28 including subsequently forming an antireflective coating over at least the light-receiving or light-transmitting region.

34. A method of manufacturing a semiconductor-based photovoltaic device, the device having an n-type layer and a p-type layer, together forming a p-n junction, the method including the steps:

forming a window layer over the n-type layer or the p-type layer;

optionally, forming a window protection layer over the window layer;

forming an etch-stop layer over the window layer, or over the window protection layer, if present;

forming a layer of semiconducting contact material over the etch-stop layer;

etching the layer of semiconducting contact material under a semiconducting contact material etching condition in at least one region corresponding to a light-receiving or light-transmitting region of the final device, to leave at least one light-receiving or light-transmitting region and at least one contact region, the etching stopping at the etch-stop layer; and

optionally, removing the etch-stop layer at least from the light-receiving region.

35. A method according to claim 34 including subsequently forming an anti-reflective coating over at least the light-receiving or light-transmitting region.