SEMICONDUCTOR OPTOELECTRONIC DEVICES AND METHODS FOR MAKING SEMICONDUCTOR OPTOELECTRONIC DEVICES
First Claim
1. A semiconductor-based optoelectronic device having an n-type layer and a p-type layer, together forming a p-n junction, the device further including:
- at least one contact region;
at least one light-receiving or light-transmitting region;
a window layer formed over the n-type layer or the p-type layer, at least at said light-receiving or light-transmitting region, the window layer providing, in operation, at least partial transmission of incident or generated light through to or from the n-type layer or p-type layer, and promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or at least partial reflection of minority carriers in the n-type or p-type layer towards the p-n junction,wherein the device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device.
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Accused Products
Abstract
A semiconductor-based optoelectronic device such as a solar cell has an n-type layer and a p-type layer, together forming a p-n junction. Contact regions are formed on the device, with light-receiving regions between contact regions. A window layer is formed over the n-type layer or the p-type layer at the light-receiving region, the window layer promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or reflection of minority carriers in the n-type or p-type layer towards the p-n junction. The device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device. For GaAs-based devices the window layer may be Al0.9Ga0.1As and the window protection layer may be GaAs. Additionally, an AlAs etch stop layer may be provided over the window protection layer.
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Citations
35 Claims
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1. A semiconductor-based optoelectronic device having an n-type layer and a p-type layer, together forming a p-n junction, the device further including:
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at least one contact region; at least one light-receiving or light-transmitting region; a window layer formed over the n-type layer or the p-type layer, at least at said light-receiving or light-transmitting region, the window layer providing, in operation, at least partial transmission of incident or generated light through to or from the n-type layer or p-type layer, and promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or at least partial reflection of minority carriers in the n-type or p-type layer towards the p-n junction, wherein the device has a window protection layer formed over the window layer, the window protection layer providing protection from degradation of the window layer during manufacture and/or operation of the device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A semiconductor-based optoelectronic device having an n-type layer and a p-type layer, together forming a p-n junction, the device further including:
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at least one contact region; at least one light-receiving or light-transmitting region; a window layer formed over the n-type layer or the p-type layer, at least at said light-receiving or light-transmitting region, the window layer providing, in operation, at least partial transmission of incident or generated light through to or from the n-type layer or p-type layer, and promoting reduced carrier recombination at the surface of the n-type or p-type layer, and/or at least partial reflection of minority carriers in the n-type or p-type layer towards the p-n junction, wherein the contact region includes a layer of semiconducting contact material, with an etch-stop layer sandwiched between the semiconducting contact material and the window layer.
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28. A method of manufacturing a semiconductor-based optoelectronic device, the device having an n-type layer and a p-type layer, together forming a p-n junction, the method including the steps:
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forming a window layer over the n-type layer or the p-type layer; forming a window protection layer over the window layer; optionally, forming an etch-stop layer over the window protection layer; forming a layer of semiconducting contact material over the window protection layer or over the etch-stop layer, if present; etching the layer of semiconducting contact material under a semiconducting contact material etching condition in at least one region corresponding to a light-receiving or light-transmitting region of the final device, to leave at least one light-receiving or light-transmitting region and at least one contact region, the etching stopping at the window protection layer or at the etch-stop layer, if present; and optionally, removing the etch-stop layer, if present, at least from the light-receiving or light-transmitting region. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A method of manufacturing a semiconductor-based photovoltaic device, the device having an n-type layer and a p-type layer, together forming a p-n junction, the method including the steps:
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forming a window layer over the n-type layer or the p-type layer; optionally, forming a window protection layer over the window layer; forming an etch-stop layer over the window layer, or over the window protection layer, if present; forming a layer of semiconducting contact material over the etch-stop layer; etching the layer of semiconducting contact material under a semiconducting contact material etching condition in at least one region corresponding to a light-receiving or light-transmitting region of the final device, to leave at least one light-receiving or light-transmitting region and at least one contact region, the etching stopping at the etch-stop layer; and optionally, removing the etch-stop layer at least from the light-receiving region. - View Dependent Claims (35)
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Specification