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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100219410A1
  • Filed: 02/17/2010
  • Published: 09/02/2010
  • Est. Priority Date: 02/27/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a gate insulating layer over the gate electrode layer;

    an oxide semiconductor layer over the gate insulating layer;

    an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer; and

    a source electrode layer and a drain electrode layer over the oxide semiconductor layer containing insulating oxide,wherein the oxide semiconductor layer containing insulating oxide has an amorphous structure, andwherein the oxide semiconductor layer containing insulating oxide is electrically connected to the source electrode layer and the drain electrode layer.

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