SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL

• US 20100219411A1
• Filed: 05/13/2010
• Published: 09/02/2010
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Gregory S. Herman, Peter P. Mardilovich, Randy L. Hoffman
• Original Assignee: Gregory S. Herman, Peter P. Mardilovich, Randy L. Hoffman
• Inventors: Hoffman, Randy L., Herman, Gregory S., Mardilovich, Peter P.
• Granted Patent: US 8,203,144 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y10T 408/5633 Adapted to coaxially grip round work

Abstract

A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Claims

1. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide that includes indium, gallium, and zinc;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

2. The semiconductor device of claim 1, wherein the metal oxide includes an atomic composition of metal (A)-to-metal (B)-to-metal (C) ratio (A:

B;

C), wherein A, B, and C are each in a range of about 0.025 to about 0.95.

3. The semiconductor device of claim 1, wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

4. The semiconductor device of claim 1, wherein the channel includes one or more compounds of the formula A_xB_xC_xO_x, wherein A is In, B is Ga, C is Zn, O is atomic oxygen, and wherein each x is independently a non-zero integer.

5. The semiconductor device of claim 4, wherein the one or more compounds of the formula A_xB_xC_xO_xincludes an atomic composition of ratio A:

B;

C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.

6. The semiconductor device of claim 4, wherein the one or more compounds of formula A_xB_xC_xO_x, includes D_x, to form a compound of the formula A_xB_xC_xD_xO_x, wherein D is Cd, O is atomic oxygen, and wherein each x is independently a non-zero integer.

7. The semiconductor device of claim 6, wherein the one or more compounds of the formula A_xB_xC_xD_xO_X includes an atomic composition of ratio A:

B;

C;

D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.

8. The semiconductor device of claim 6, wherein the metal oxide includes one or more metal oxides including indium, gallium, zinc, and cadmium.

9. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes an indium-gallium-zinc metal oxide in an amorphous form, a single-phase crystalline form, or a mixed-phase crystalline form; and

a gate electrode separated from the channel by a gate dielectric.

10. The semiconductor device of claim 9, wherein the source, drain, and gate electrodes include a substantially transparent material.

11. The semiconductor device of claim 9, wherein the channel is deposited with an ink-jet deposition technique.

12. The semiconductor device of claim 9, including a substrate or substrate assembly upon which the semiconductor device is formed.

13. A method of forming a channel, comprising:

providing at least one precursor composition that includes one or more precursor compounds that include indium-gallium-zinc oxide; and

depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode.

14. The method of claim 13, wherein the precursor composition includes a liquid form.

15. The method of claim 14, wherein depositing the channel includes an ink-jet deposition technique when the precursor composition includes the liquid form.

16. The method of claim 13, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein A is In, B is Ga, C is Zn, and wherein each x is independently a non-zero integer.

17. The method of claim 16, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein D is Cd, and wherein each x is independently a non-zero integer.

18. The method of claim 13, wherein depositing the channel includes depositing one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

19. The method of claim 13, wherein depositing a channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.

20. The method of claim 13, including providing a substrate or substrate assembly;

and

forming a semiconductor device on the substrate or substrate assembly.