SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL
First Claim
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1. A semiconductor device, comprising:
- a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide that includes indium, gallium, and zinc;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
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Abstract
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide that includes indium, gallium, and zinc; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes an indium-gallium-zinc metal oxide in an amorphous form, a single-phase crystalline form, or a mixed-phase crystalline form; and a gate electrode separated from the channel by a gate dielectric. - View Dependent Claims (10, 11, 12)
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13. A method of forming a channel, comprising:
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providing at least one precursor composition that includes one or more precursor compounds that include indium-gallium-zinc oxide; and depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification