MOS-Gated Power Devices, Methods, and Integrated Circuits
First Claim
Patent Images
1. A semiconductor device comprising:
- an insulated trench having a sidewall;
a gate electrode;
a semiconductor body region positioned so that voltage bias applied to the gate electrode can induce inversion in said body region to thereby create a channel;
permanent electrostatic charge positioned in proximity to said sidewall of said trench; and
a conductive shield layer which is positioned above said insulated trench, andnot electrically connected to said gate.
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Accused Products
Abstract
MOS-gated devices, related methods, and systems for vertical power and RF devices including an insulated trench and a gate electrode. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. Permanent electrostatic charges are included in said insulation material. A conductive shield layer is positioned above the insulated trench, to reduce parasitic capacitances.
51 Citations
33 Claims
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1. A semiconductor device comprising:
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an insulated trench having a sidewall; a gate electrode; a semiconductor body region positioned so that voltage bias applied to the gate electrode can induce inversion in said body region to thereby create a channel; permanent electrostatic charge positioned in proximity to said sidewall of said trench; and a conductive shield layer which is positioned above said insulated trench, and not electrically connected to said gate. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11)
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5. (canceled)
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12. A substantially vertical device comprising:
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a first-conductivity-type source region; an insulated trench having an approximately vertical sidewall; a gate electrode; a semiconductor body region positioned so that voltage bias applied to the gate electrode can induce inversion in said body region to thereby create a lateral channel;
said body region being positioned to separate said source region from said trench;a first-conductivity type drain extension region positioned in proximity to said trench, and leading from said channel to said sidewall of said trench; permanent electrostatic charge positioned near said sidewall in density sufficient to invert at least some second-conductivity semiconductor material adjacent thereto; and a conductive shield layer which is positioned above said insulated trench, and not electrically connected to said gate. - View Dependent Claims (14, 16, 17, 18, 19)
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13. (canceled)
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15. (canceled)
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20-22. -22. (canceled)
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23. A substantially vertical semiconductor device comprising:
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an insulated trench; a surface insulation layer containing at least two physically separated gate electrode portions; a body region positioned so that a voltage bias applied to one of the gate electrodes will cause an inversion layer in said body region; permanent charges positioned in said insulation material; and a conductive shield layer positioned between said gate electrodes within said surface insulation layer. - View Dependent Claims (29, 30, 32)
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24-28. -28. (canceled)
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31. (canceled)
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33-105. -105. (canceled)
Specification