METHOD FOR MANUFACTURING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE MADE THEREOF
First Claim
1. A method of manufacturing a dual work function semiconductor device, the method comprising:
- defining at least a first region and a second region in a substrate, the first region being electrically isolated from the second region;
forming a first transistor in the first region, the first transistor having a first effective work function, wherein forming the first transistor comprises;
providing a first gate dielectric stack on the substrate, the first gate dielectric stack comprising a first gate dielectric layer and a first gate dielectric capping layer on and in contact with the first gate dielectric layer;
performing a thermal treatment of the first gate dielectric stack so as to modify the first gate dielectric stack, the modified first gate dielectric stack defining the first effective work function;
providing a first metal gate electrode layer on the modified first gate dielectric stack;
patterning the first metal gate electrode layer and modified first gate dielectric stack;
andafter forming the first transistor, forming a second transistor in the second region having a second effective work function being different from the first effective work function.
3 Assignments
0 Petitions
Accused Products
Abstract
A method for manufacturing a dual work function device is disclosed. In one aspect, the process includes a first and second region in a substrate. The method includes forming a first transistor in the first region which has a first work function. Subsequently, a second transistor is formed in the second region having a different work function. The process of forming the first transistor includes providing a first gate dielectric stack having a first gate dielectric layer and a first gate dielectric capping layer on the first gate dielectric layer, performing a thermal treatment to modify the first gate dielectric stack, the modified first gate dielectric stack defining the first work function, providing a first metal gate electrode layer on the modified first gate dielectric stack, and patterning the first metal gate electrode layer and the modified first gate dielectric stack.
-
Citations
20 Claims
-
1. A method of manufacturing a dual work function semiconductor device, the method comprising:
-
defining at least a first region and a second region in a substrate, the first region being electrically isolated from the second region; forming a first transistor in the first region, the first transistor having a first effective work function, wherein forming the first transistor comprises; providing a first gate dielectric stack on the substrate, the first gate dielectric stack comprising a first gate dielectric layer and a first gate dielectric capping layer on and in contact with the first gate dielectric layer; performing a thermal treatment of the first gate dielectric stack so as to modify the first gate dielectric stack, the modified first gate dielectric stack defining the first effective work function; providing a first metal gate electrode layer on the modified first gate dielectric stack; patterning the first metal gate electrode layer and modified first gate dielectric stack; and after forming the first transistor, forming a second transistor in the second region having a second effective work function being different from the first effective work function. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A dual work function semiconductor device comprising:
-
a first transistor in a first region of a substrate, wherein the first transistor comprises a gate dielectric stack comprising an intermixed gate dielectric layer and gate dielectric capping layer, the gate dielectric stack defining the first effective work function of the first transistor, and a first metal gate electrode on the gate dielectric stack; and a second transistor in a second region of the substrate. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification