Light Emitting Device and Method of Manufacturing the Same

• US 20100221855A1
• Filed: 02/11/2010
• Published: 09/02/2010
• Est. Priority Date: 06/27/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Noda, Takeshi, Yamazaki, Shunpei
• Granted Patent: US 8,540,541 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/80522 combined with auxiliary electrodes
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers
• CPC Class Codes: H10K 71/135 using ink-jet printing

Abstract

In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.

Claims

1-15. -15. (canceled)

16. A method of manufacturing a light emitting device with a light comprising:

forming a laminate of an insulating film and a light-absorbing multilayer film on a first electrode;

etching a part of the laminate so as to form a partition wall covering an end portion of the first electrode;

forming an organic compound-containing film over the first electrode and the laminate; and

forming a second electrode over the organic compound-containing film transmits light,

wherein the second electrode transmits light.

17. The method of manufacturing a light emitting device according to claim 16, wherein the insulating film comprises an inorganic insulating film or an organic resin film.

18. The method of manufacturing a light emitting device according to claim 16, wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode.

19. The method of manufacturing a light emitting device according to claim 16, wherein the light-absorbing multiplayer film includes at least a layer comprising a reflective metal film.

20. The method of manufacturing a light emitting device according to claim 16, wherein the light-absorbing multilayer film includes at least a layer comprising a material selected from the group consisting of Al₂O₃, SiO₂, ZrO₂, HfO₂, Sc₂O₃, TiO₂, ITO and ZnO.

21. The method of manufacturing a light emitting device according to claim 16, wherein the light-absorbing multilayer film includes at least a light-transmissive insulating film comprising nitride.

22. The method of manufacturing a light emitting device according to claim 16, wherein the light-absorbing multilayer film includes at least a layer comprising a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome.

23. The method of manufacturing a light emitting device according to claim 16, wherein the organic compound-containing film is formed by an ink-jet.

24. The method of manufacturing a light emitting device according to claim 16, wherein the organic compound-containing film is formed by an ink-jet under reduced pressure.

25. A method of manufacturing a light emitting device comprising:

forming a laminate of an insulating film and a light-absorbing multilayer film on a first electrode;

etching a part of the first electrode and a part of the laminate so as to form a partition wall covering an end portion of the first electrode;

forming an organic compound-containing film over the first electrode and the laminate; and

forming a second electrode over the organic compound-containing film transmits light,

wherein the second electrode transmits light.

26. The method of manufacturing a light emitting device according to claim 25, wherein the insulating film comprises an inorganic insulating film or an organic resin film.

27. The method of manufacturing a light emitting device according to claim 25, wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode.

28. The method of manufacturing a light emitting device according to claim 25, wherein the light-absorbing multiplayer film includes at least a layer comprising a reflective metal film.

29. The method of manufacturing a light emitting device according to claim 25, wherein the light-absorbing multilayer film includes at least a layer comprising a material selected from the group consisting of Al₂O₃, SiO₂, ZrO₂, HfO₂, Sc₂O₃, TiO₂, ITO and ZnO.

30. The method of manufacturing a light emitting device according to claim 25, wherein the light-absorbing multilayer film includes at least a light-transmissive insulating film comprising nitride.

31. The method of manufacturing a light emitting device according to claim 25, wherein the light-absorbing multilayer film includes at least a layer comprising a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome.

32. The method of manufacturing a light emitting device according to claim 25, wherein the organic compound-containing film is formed by an ink-jet.

33. The method of manufacturing a light emitting device according to claim 25, wherein the organic compound-containing film is formed by an ink-jet under reduced pressure.

34. A method of manufacturing a light emitting device comprising:

forming a laminate of an insulating film and a light-absorbing multilayer film on a first electrode;

etching a part of the laminate so as to form a partition wall covering an end portion of the first electrode;

forming a wiring over the laminate;

forming an organic compound-containing film over the first electrode and the laminate; and

forming a second electrode over the organic compound-containing film transmits light,

wherein the second electrode transmits light.

35. The method of manufacturing a light emitting device according to claim 34, wherein the insulating film comprises an inorganic insulating film or an organic resin film.

36. The method of manufacturing a light emitting device according to claim 34, wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode.

37. The method of manufacturing a light emitting device according to claim 34, wherein the light-absorbing multiplayer film includes at least a layer comprising a reflective metal film.

38. The method of manufacturing a light emitting device according to claim 34, herein the light-absorbing multilayer film includes at least a layer comprising a material selected from the group consisting of Al₂O₃, SiO₂, ZrO₂, HfO₂, Sc₂O₃, TiO₂, ITO and ZnO.

39. The method of manufacturing a light emitting device according to claim 34, wherein the light-absorbing multilayer film includes at least a light-transmissive insulating film comprising nitride.

40. The method of manufacturing a light emitting device according to claim 34, wherein the light-absorbing multilayer film includes at least a layer comprising a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome.

41. The method of manufacturing a light emitting device according to claim 34, wherein the organic compound-containing film is formed by an ink jet.

42. The method of manufacturing a light emitting device according to claim 34, wherein the organic compound-containing film is formed by an ink-jet under reduced pressure.