SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF
First Claim
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1. A process for production of a semiconductor light-emitting device having a semiconductor layer the surface of which a relief structure and an electrode are formed on and light is extracted from;
- comprising;
stacking an active layer and said semiconductor layer on a substrate,providing said semiconductor layer with such a contact layer as brings said electrode and the surface of said semiconductor layer into ohmic contact with each other,forming an oxide film on the surface of said semi-conductor layer in an area where said electrode is to be formed,forming a protective film on said semiconductor layer in the whole surface area including the area where said oxide film is formed,forming a self-assembled film on said protective film,fabricating said protective film by dry etching through said self-assembled film as a mask, to form a protective film mask,fabricating said semiconductor layer by dry etching through said protective film mask, to form said relief structure, andremoving said protective film in the area where said electrode is to be formed, followed by depositing there an electro-conductive material on said contact layer to form said electrode.
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Abstract
One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
12 Citations
16 Claims
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1. A process for production of a semiconductor light-emitting device having a semiconductor layer the surface of which a relief structure and an electrode are formed on and light is extracted from;
- comprising;
stacking an active layer and said semiconductor layer on a substrate, providing said semiconductor layer with such a contact layer as brings said electrode and the surface of said semiconductor layer into ohmic contact with each other, forming an oxide film on the surface of said semi-conductor layer in an area where said electrode is to be formed, forming a protective film on said semiconductor layer in the whole surface area including the area where said oxide film is formed, forming a self-assembled film on said protective film, fabricating said protective film by dry etching through said self-assembled film as a mask, to form a protective film mask, fabricating said semiconductor layer by dry etching through said protective film mask, to form said relief structure, and removing said protective film in the area where said electrode is to be formed, followed by depositing there an electro-conductive material on said contact layer to form said electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13)
- comprising;
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12. A process for production of a semiconductor light-emitting device having a semiconductor layer the surface of which a relief structure and an electrode are formed on and light is extracted from;
- comprising;
stacking an active layer and said semiconductor layer on a substrate, forming an oxide film on the surface of said semi-conductor layer in an area where said electrode is to be formed, forming a protective film on said semiconductor layer in the whole surface area including the area where said oxide film is formed, forming a self-assembled film on said protective film, fabricating said protective film by dry etching through said self-assembled film as a mask, to form a protective film mask, fabricating said semiconductor layer by dry etching through said protective film mask, to form said relief structure, removing said protective film in the area where said electrode is to be formed, followed by depositing an electro-conductive material there on said contact layer to form said electrode, and establishing ohmic contact between said electrode and the surface of said semiconductor layer. - View Dependent Claims (14)
- comprising;
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15. A semiconductor light-emitting device having a semi-conductor layer the surface of which a relief structure and an electrode are formed on and light is extracted from, wherein said relief structure is formed in the area of 10 μ
- m or less from the electrode.
- View Dependent Claims (16)
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsAkaike, Yasuhiko, Yasuda, Hidefumi, Suzuki, Takeyuki, Asakawa, Koji, Fujimoto, Akira, Kitagawa, Ryota
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/29
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CPC Class CodesH01L 33/005 ProcessesH01L 33/22 Roughened surfaces, e.g. at...
