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Semiconductor Device and Method of Forming an Interconnect Structure for 3-D Devices Using Encapsulant for Structural Support

  • US 20100221873A1
  • Filed: 05/06/2010
  • Published: 09/02/2010
  • Est. Priority Date: 12/10/2008
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a substrate;

    forming a first interconnect structure over a first surface of the substrate;

    mounting a semiconductor die or component to the first interconnect structure;

    depositing an encapsulant over the semiconductor die or component and first interconnect structure;

    removing a portion of the substrate to reduce thickness of the substrate;

    forming a via through a second surface of the substrate, opposite the first surface of the substrate, to the first interconnect structure;

    conformally applying a first insulating layer over a sidewall of the via; and

    forming a second interconnect structure in the via.

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