Semiconductor Device and Method of Forming an Interconnect Structure for 3-D Devices Using Encapsulant for Structural Support
First Claim
1. A method of making a semiconductor device, comprising:
- providing a substrate;
forming a first interconnect structure over a first surface of the substrate;
mounting a semiconductor die or component to the first interconnect structure;
depositing an encapsulant over the semiconductor die or component and first interconnect structure;
removing a portion of the substrate to reduce thickness of the substrate;
forming a via through a second surface of the substrate, opposite the first surface of the substrate, to the first interconnect structure;
conformally applying a first insulating layer over a sidewall of the via; and
forming a second interconnect structure in the via.
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited over the semiconductor die and first interconnect structure for structural support. A portion of a second side of the substrate, opposite the first side of the substrate, is removed to reduce its thickness. The encapsulant maintains substrate robustness during thinning process. A TSV is formed through the second side of the substrate to the first interconnect structure. A second interconnect structure is formed in the TSV. The TSV has a first insulating layer formed over the second side of the substrate and first conductive layer formed over the first insulating layer and into the TSV. The second interconnect structure has a second conductive layer formed over the first conductive layer in an area away from the TSV.
29 Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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providing a substrate; forming a first interconnect structure over a first surface of the substrate; mounting a semiconductor die or component to the first interconnect structure; depositing an encapsulant over the semiconductor die or component and first interconnect structure; removing a portion of the substrate to reduce thickness of the substrate; forming a via through a second surface of the substrate, opposite the first surface of the substrate, to the first interconnect structure; conformally applying a first insulating layer over a sidewall of the via; and forming a second interconnect structure in the via. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, comprising:
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providing a substrate; forming a first interconnect structure over a first surface of the substrate; mounting a semiconductor die or component to the first interconnect structure; depositing an encapsulant over the semiconductor die or component and first interconnect structure; forming a via through a second surface of the substrate, opposite the first surface of the substrate, to the first interconnect structure; and forming a second interconnect structure in the via. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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providing a substrate; forming a first interconnect structure over a first surface of the substrate; mounting a semiconductor die or component to the first interconnect structure; depositing an encapsulant over the semiconductor die or component and first interconnect structure; forming a via formed through a second surface of the substrate, opposite the first surface of the substrate, to the first interconnect structure; conformally applying a first insulating layer over a sidewall of the via; and forming a first conductive layer over the first insulating layer in the via. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method of making a semiconductor device, comprising:
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providing a substrate; forming a first interconnect structure over a first surface of the substrate; mounting a semiconductor die or component to the first interconnect structure; depositing an encapsulant over the semiconductor die or component and first interconnect structure; forming a via through a second surface of the substrate, opposite the first surface of the substrate, to the first interconnect structure; and forming a first conductive layer over a sidewall of the via. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification