SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
Patent Images
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first epitaxial layer on a growth substrate having an insulating property;
depositing a thick film layer having a thickness of 30 or more on the first epitaxial layer;
removing the growth substrate by using a laser beam; and
treating a surface of the first epitaxial layer, which is exposed as the growth substrate is removed.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride-based cladding layer or/and formed on the second type nitride-based cladding layer.
34 Citations
14 Claims
-
1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a first epitaxial layer on a growth substrate having an insulating property; depositing a thick film layer having a thickness of 30 or more on the first epitaxial layer; removing the growth substrate by using a laser beam; and treating a surface of the first epitaxial layer, which is exposed as the growth substrate is removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification