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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20100221897A1
  • Filed: 03/19/2010
  • Published: 09/02/2010
  • Est. Priority Date: 10/29/2005
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a first epitaxial layer on a growth substrate having an insulating property;

    depositing a thick film layer having a thickness of 30 or more on the first epitaxial layer;

    removing the growth substrate by using a laser beam; and

    treating a surface of the first epitaxial layer, which is exposed as the growth substrate is removed.

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