Method for Reducing the Damage Induced by a Physical Force Assisted Cleaning

• US 20100224215A1
• Filed: 03/05/2010
• Published: 09/09/2010
• Est. Priority Date: 03/06/2009
• Status: Abandoned Application

• Current Assignee: IMEC International
• Original Assignee: IMEC International
• Inventors: Pacco, Antoine, Halder, Sandip, Janssens, Tom, Mertens, Paul
• Application Number:
  US12/718,732
• Publication Number:
  US 20100224215A1
• Time in Patent Office: Days
• US Class Current: 134/6
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers

Abstract

Disclosed is a method for performing a physical force-assisted cleaning process on a patterned surface of a substrate, including providing a substrate having at least one patterned surface, supplying a cleaning liquid to the patterned surface, and applying a physical force to the cleaning liquid in contact with the patterned surface, whereby the physical force leads to bubble formation in the cleaning liquid. Furthermore, and prior to applying the physical force, an additive is supplied to the surface, and the additive is maintained in contact with the surface for a given time, the additive and the time being chosen so that a substantially complete wetting of the surface by the cleaning liquid is achieved.

Claims

1. A method for performing a physical force-assisted cleaning process on a patterned surface of a substrate comprising:

a) supplying a cleaning liquid to a patterned surface of a substrate, and

b) applying a physical force to the cleaning liquid in contact with the patterned surface, whereby the physical force leads to bubble formation in the cleaning liquid,

wherein prior to or during the application of the physical force, an additive is supplied to said surface, and said additive is maintained in contact with said surface for a time, said additive and said time being chosen so that substantially complete wetting of the surface by the cleaning liquid is achieved.

2. The method according to claim 1, wherein said additive and said time are chosen so that a contact angle of the cleaning liquid on said patterned surface is smaller than 30°

.

3. The method according to claim 1, wherein the physical force is an acoustic agitation provided by a megasonic energy source.

4. The method according to claim 1, wherein the physical force is a mechanical agitation provided by an aerosol spray.

5. The method according to claim 1, wherein the additive is supplied prior to step (b).

6. The method according to claim 1, wherein the additive is supplied during step (b), by mixing the additive with the cleaning solution during the application of the physical force.

7. The method according to claim 1, wherein the additive is an oxidizing substance.

8. The method according to claim 7, wherein the oxidizing substance is an aqueous mixture comprising hydrogen-peroxide.

9. The method according to claim 7, wherein the oxidizing substance is an aqueous mixture comprising ozone (O₃).

10. The method according to claim 1, wherein the additive is isopropylalcohol (IPA).

11. The method according to claim 10, wherein the cleaning liquid is de-ionized water.

12. The method according to claim 1, wherein the additive is acetone.

13. The method according to claim 12, wherein the cleaning liquid is de-ionized water.

14. The method according to claim 1, wherein the additive is a surfactant.

15. The method according to claim 14, wherein the cleaning liquid is de-ionized water.

16. The method according to claim 1, wherein the cleaning liquid is de-ionized water.

17. The method according to claim 1, wherein the cleaning liquid is a solvent-based solution.

18. The method according to claim 1, wherein the substrate is a hydrophobic patterned silicon substrate.

19. The method according to claim 1, wherein the substrate comprises features having a linewidth smaller or equal to 45 nm.