FIELD EFFECT TRANSISTOR

• US 20100224870A1
• Filed: 12/02/2008
• Published: 09/09/2010
• Est. Priority Date: 12/13/2007
• Status: Abandoned Application

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya, Itagaki, Naho
• Application Number:
  US12/681,793
• Publication Number:
  US 20100224870A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A field effect transistor includes at least a channel layer, a gate insulation layer, a source electrode, a drain electrode, and a gate electrode. The channel layer is formed from an amorphous oxide material that contains at least In and Mg, and an element ratio, expressed by Mg/(In+Mg), of the amorphous oxide material is 0.1 or higher and 0.48 or lower.

Claims

1. A field effect transistor comprising at least a channel layer, a gate insulation layer, a source electrode, a drain electrode, and a gate electrode,

wherein the channel layer is made of an amorphous oxide material that contains at least In and Mg, and

wherein an element ratio, expressed by Mg/(In+Mg), of the amorphous oxide material is 0.1 or higher and 0.48 or lower.

2. A field effect transistor according to claim 1, wherein the element ratio, expressed by Mg/(In+Mg) of the amorphous oxide material is 0.2 or higher and 0.48 or lower.

3. A field effect transistor according to claim 1, wherein the element ratio, expressed by Mg/(In+Mg) of the amorphous oxide material is 0.3 or higher and 0.42 or lower.

4. A field effect transistor according to claim 1,

wherein the amorphous oxide material forming the channel layer contains Zn, and

wherein an element ratio, expressed by Mg/(In+Zn+Mg), of the amorphous oxide material is 0.1 or higher and 0.48 or lower.

8. A field effect transistor according to claim 1, wherein the gate insulation layer is made of a silicon oxide.

9. A display comprising the field effect transistor according to claim 1 being used as a driving device of a display device.

5. A field effect transistor comprising at least a channel layer, a gate insulation layer, a source electrode, a drain electrode, and a gate electrode,

wherein the channel layer is formed from an amorphous oxide material that contains at least In and Al, and

wherein an element ratio, expressed by Al/(In+Al), of the amorphous oxide material is 0.15 or higher and 0.45 or lower.

6. A field effect transistor according to claim 5, wherein the element ratio, expressed by Al/(In+Al) of the amorphous oxide material is 0.19 or higher and 0.40 or lower.

7. A field effect transistor according to claim 5, wherein the element ratio, expressed by Al/(In+Al) of the amorphous oxide material is 0.25 or higher and 0.3 or lower.