SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a substrate having an insulating surface;
a first electrode that has a light-transmitting property and is provided over the substrate;
a second electrode that has a light-transmitting property and is provided over the substrate;
a semiconductor layer that has a light-transmitting property and is provided so as to be electrically connected to the first electrode and the second electrode;
a first wiring electrically connected to the first electrode;
an insulating layer provided so as to cover at least the semiconductor layer;
a third electrode that has a light-transmitting property and is provided over a portion of the insulating layer overlapping with the semiconductor layer; and
a second wiring electrically connected to the third electrode.
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Accused Products
Abstract
A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.
160 Citations
8 Claims
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1. A semiconductor device comprising:
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a substrate having an insulating surface; a first electrode that has a light-transmitting property and is provided over the substrate; a second electrode that has a light-transmitting property and is provided over the substrate; a semiconductor layer that has a light-transmitting property and is provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a third electrode that has a light-transmitting property and is provided over a portion of the insulating layer overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising:
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stacking a first conductive layer having a light-transmitting property and a second conductive layer over a substrate having an insulating surface; forming a first mask over the second conductive layer; etching the first conductive layer to form a first electrode and a second electrode and etching the second conductive layer to form a third conductive layer, by using the first mask; recessing the first mask to form a second mask; etching the third conductive layer by using the second mask to form a first wiring; forming a semiconductor layer that has a light-transmitting property and is electrically connected to the first electrode and the second electrode; forming an insulating layer so as to cover the semiconductor layer; stacking a fourth conductive layer having a light-transmitting property and a fifth conductive layer over the insulating layer; forming a third mask over the fifth conductive layer; etching the fourth conductive layer to form a third electrode and etching the fifth conductive layer to form a sixth conductive layer, by using the third mask; recessing the third mask to form a fourth mask; and etching the sixth conductive layer by using the fourth mask to form a second wiring.
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Specification