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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100224873A1
  • Filed: 03/04/2010
  • Published: 09/09/2010
  • Est. Priority Date: 03/06/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer over a substrate having an insulating surface;

    a gate insulating layer over the gate electrode layer;

    an oxide semiconductor layer including a channel formation region over the gate insulating layer;

    a buffer layer over the oxide semiconductor layer; and

    source and drain electrode layers over the buffer layer,wherein in the buffer layer, a first region which is in contact with the source and drain electrode layers has higher electrical conductivity than a second region which is in contact with the channel formation region of the oxide semiconductor layer.

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