SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a first electrode comprising a first conductive layer having a light-transmitting property;
a first wiring electrically connected to the first electrode and comprising a layered structure of the first conductive layer and a second conductive layer wherein electrical resistance of the second conductive layer is lower than electrical resistance of the first conductive layer;
an insulating layer formed over the first electrode and the first wiring;
a second electrode formed over the insulating layer and comprising a third conductive layer having a light-transmitting property;
a second wiring electrically connected to the second electrode and comprising a layered structure of the third conductive layer and a fourth conductive layer wherein electrical resistance of the fourth conductive layer is lower than electrical resistance of the third conductive layer;
a third electrode comprising a fifth conductive layer having a light-transmitting property; and
a semiconductor layer formed over the second electrode and the third electrode and overlapped with the first electrode with the insulating layer interposed therebetween.
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Abstract
It is an object to provide a semiconductor device with low wiring resistance, high transmittance, or a high aperture ratio. A gate electrode, a semiconductor layer, and a source electrode and a drain electrode are formed using a material having a light-transmitting property and a wiring such as a gate wiring or a source wiring is formed using a material whose resistivity is lower than that of the material having a light-transmitting property. Alternatively, the source wiring and/or the gate wiring are/is formed by a stack of a material having a light-transmitting property and a material whose resistivity is lower than that of the material having a light-transmitting property.
168 Citations
27 Claims
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1. A semiconductor device comprising:
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a first electrode comprising a first conductive layer having a light-transmitting property; a first wiring electrically connected to the first electrode and comprising a layered structure of the first conductive layer and a second conductive layer wherein electrical resistance of the second conductive layer is lower than electrical resistance of the first conductive layer; an insulating layer formed over the first electrode and the first wiring; a second electrode formed over the insulating layer and comprising a third conductive layer having a light-transmitting property; a second wiring electrically connected to the second electrode and comprising a layered structure of the third conductive layer and a fourth conductive layer wherein electrical resistance of the fourth conductive layer is lower than electrical resistance of the third conductive layer; a third electrode comprising a fifth conductive layer having a light-transmitting property; and a semiconductor layer formed over the second electrode and the third electrode and overlapped with the first electrode with the insulating layer interposed therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first electrode comprising a first conductive layer having a light-transmitting property; a first wiring electrically connected to the first electrode and comprising a layered structure of the first conductive layer and a second conductive layer wherein electrical resistance of the second conductive layer is lower than electrical resistance of the first conductive layer; a second wiring comprising a third conductive layer having a light-transmitting property; an insulating layer formed over the first electrode, the first wiring, and the second wiring; a second electrode formed over the insulating layer and comprising a fourth conductive layer having a light-transmitting property; a third wiring electrically connected to the second electrode and comprising a layered structure of the fourth conductive layer and a fifth conductive layer wherein electrical resistance of the fifth conductive layer is lower than electrical resistance of the fourth conductive layer; a third electrode comprising a sixth conductive layer having a light-transmitting property; a seventh conductive layer having a light-transmitting property provided over the second wiring with the insulating layer interposed therebetween; and a semiconductor layer formed over the second electrode and the third electrode and overlapped with the first electrode with the insulating layer interposed therebetween. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a gate electrode comprising a first conductive layer having a light-transmitting property; a gate wiring electrically connected to the gate electrode and comprising a layered structure of the first conductive layer and a second conductive layer wherein electrical resistance of the second conductive layer is lower than electrical resistance of the first conductive layer; a first insulating layer formed over the gate electrode and the gate wiring; a first electrode formed over the first insulating layer and comprising a third conductive layer having a light-transmitting property; a source wiring electrically connected to the first electrode and comprising a layered structure of the third conductive layer and a fourth conductive layer wherein electrical resistance of the fourth conductive layer is lower than electrical resistance of the third conductive layer; a second electrode comprising a fifth conductive layer having a light-transmitting property; a semiconductor layer formed over the first electrode and the second electrode and overlapped with the gate electrode with the first insulating layer interposed therebetween; a second insulating layer formed over the first electrode, the second electrode, and the semiconductor layer; and a pixel electrode formed over the second insulating layer and electrically connected to the second electrode. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification