SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME
First Claim
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1. A semiconductor optoelectronic device with enhanced light extraction efficiency, comprising:
- a substrate;
a first luminescent area; and
a second luminescent area including a plurality of holes surrounding said first luminescent area, each of said first luminescent area and said second luminescent area comprising;
an n-type conduction layer disposed on said substrate;
a luminescent layer formed on said n-type conduction layer;
a p-type conduction layer formed on said luminescent layer; and
a transparent conductive layer disposed on said p-type conduction layer.
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Abstract
A semiconductor optoelectronic device with enhanced light extraction efficiency includes a major luminescent area and a secondary luminescent area, wherein the major luminescent area is surrounded by a secondary luminescent area. The secondary luminescent area not only can improve the light extraction efficiency of the major luminescent area, but per se also can luminesce. In addition, one embodiment of the present invention provides a fabricating method for forming the secondary luminescent area.
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Citations
20 Claims
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1. A semiconductor optoelectronic device with enhanced light extraction efficiency, comprising:
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a substrate; a first luminescent area; and a second luminescent area including a plurality of holes surrounding said first luminescent area, each of said first luminescent area and said second luminescent area comprising; an n-type conduction layer disposed on said substrate; a luminescent layer formed on said n-type conduction layer; a p-type conduction layer formed on said luminescent layer; and a transparent conductive layer disposed on said p-type conduction layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for forming a semiconductor optoelectronic device with enhanced light extraction efficiency, comprising the steps of:
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providing a substrate; forming a luminescent structure on said substrate, said luminescent structure comprising; an n-type conduction layer formed on said substrate; a luminescent layer formed on said n-type conduction layer; and a p-type conduction layer formed on said luminescent layer; and etching said luminescent structure to form a first luminescent area and a second luminescent area including a plurality of holes surrounding said first luminescent area. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification