COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES
First Claim
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1. A structure comprising:
- a light emitting device comprising;
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a metal p-contact disposed on the p-type region; and
a metal n-contact disposed on the n-type region;
wherein;
the metal p-contact and the metal n-contact are both formed on a same side of the semiconductor structure; and
one of the metal p-contact and the metal n-contact is a large area contact and the other of the metal p-contact and the metal n-contact is a small area contact, the large area contact having a larger area than the small area contact;
a mount; and
a bonding structure connecting the light emitting device to the mount, wherein in an area underlying the small area contact, the bonding structure comprises a plurality of metal regions separated by gaps, wherein nearest neighbor metal regions are separated by a gap less than 5 microns wide.
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Abstract
A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.
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Citations
15 Claims
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1. A structure comprising:
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a light emitting device comprising; a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region; a metal p-contact disposed on the p-type region; and a metal n-contact disposed on the n-type region; wherein; the metal p-contact and the metal n-contact are both formed on a same side of the semiconductor structure; and one of the metal p-contact and the metal n-contact is a large area contact and the other of the metal p-contact and the metal n-contact is a small area contact, the large area contact having a larger area than the small area contact; a mount; and a bonding structure connecting the light emitting device to the mount, wherein in an area underlying the small area contact, the bonding structure comprises a plurality of metal regions separated by gaps, wherein nearest neighbor metal regions are separated by a gap less than 5 microns wide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification