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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20100224936A1
  • Filed: 01/06/2010
  • Published: 09/09/2010
  • Est. Priority Date: 03/03/2009
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • adjacent first and second transistors each formed on a semiconductor substrate, the first and second transistors respectively having first and second gate electrodes and sharing a source/drain region therebetween;

    a first insulating film formed on the first gate electrode;

    a second insulating film formed on the second gate electrode and comprising a region thicker than the first insulating film; and

    a self-aligned contact plug connected to the source/drain region, a horizontal distance from a center position of the self-aligned contact plug to the second gate electrode being less than a horizontal distance from a center position between the first and second gate electrodes to the second gate electrode.

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