SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
1. A semiconductor device, comprising:
- adjacent first and second transistors each formed on a semiconductor substrate, the first and second transistors respectively having first and second gate electrodes and sharing a source/drain region therebetween;
a first insulating film formed on the first gate electrode;
a second insulating film formed on the second gate electrode and comprising a region thicker than the first insulating film; and
a self-aligned contact plug connected to the source/drain region, a horizontal distance from a center position of the self-aligned contact plug to the second gate electrode being less than a horizontal distance from a center position between the first and second gate electrodes to the second gate electrode.
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Accused Products
Abstract
A semiconductor device according to one embodiment includes: adjacent first and second transistors each formed on a semiconductor substrate, the first and second transistors respectively having first and second gate electrodes and sharing a source/drain region therebetween; a first insulating film formed on the first gate electrode; a second insulating film formed on the second gate electrode and comprising a region thicker than the first insulating film; and a self-aligned contact plug connected to the source/drain region, a horizontal distance from a center position of the self-aligned contact plug to the second gate electrode being less than a horizontal distance from a center position between the first and second gate electrodes to the second gate electrode.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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adjacent first and second transistors each formed on a semiconductor substrate, the first and second transistors respectively having first and second gate electrodes and sharing a source/drain region therebetween; a first insulating film formed on the first gate electrode; a second insulating film formed on the second gate electrode and comprising a region thicker than the first insulating film; and a self-aligned contact plug connected to the source/drain region, a horizontal distance from a center position of the self-aligned contact plug to the second gate electrode being less than a horizontal distance from a center position between the first and second gate electrodes to the second gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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adjacent first and second transistors each formed on a semiconductor substrate, the first and second transistors respectively having first and second gate electrodes and sharing a source/drain region therebetween; a self-aligned contact plug connected to the source/drain region; and first and second insulating films respectively formed on the first and second gate electrodes, the first and second insulating films each having a sidewall shape in which a thickness on the self-aligned contact plug side is thicker than that on the opposite side, and the first and second insulating films sandwiching the self-aligned contact plug. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a semiconductor device, comprising:
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forming adjacent first and second transistors on a semiconductor substrate, the first and second transistors respectively having first and second gate electrodes and sharing a source/drain region therebetween; forming a first interlayer insulating film between the first and second gate electrodes; forming a core above the first interlayer insulating film; forming sidewall insulating films on both sides of the core so as to cover the first and second gate electrodes; forming a second interlayer insulating film on the first interlayer insulating film and the sidewall insulating films; forming a contact hole in the first and second interlayer insulating films so as to pass between the sidewall insulating film on the first gate electrode and that on the second gate electrode and reach the source/drain region; and forming a self-aligned contact plug in the contact hole. - View Dependent Claims (18, 19, 20)
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Specification