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Three-Dimensional System-in-Package Architecture

  • US 20100225002A1
  • Filed: 12/04/2009
  • Published: 09/09/2010
  • Est. Priority Date: 03/06/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first substrate;

    a first plurality of dielectric layers;

    a first via extending through the first substrate and one or more of the first plurality of dielectric layers; and

    a second via extending through the first substrate and two or more of the first plurality of dielectric layers, the second via extending through more of the first plurality of dielectric layers than the first via.

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