Three-Dimensional System-in-Package Architecture
First Claim
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1. A semiconductor device comprising:
- a first substrate;
a first plurality of dielectric layers;
a first via extending through the first substrate and one or more of the first plurality of dielectric layers; and
a second via extending through the first substrate and two or more of the first plurality of dielectric layers, the second via extending through more of the first plurality of dielectric layers than the first via.
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Abstract
A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. A semiconductor die is manufactured with both via-first TSVs as well as via-last TSVs in order to establish low resistance paths for die connections between adjacent dies as well as for providing a low resistance path for feedthrough channels between multiple dies.
249 Citations
20 Claims
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1. A semiconductor device comprising:
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a first substrate; a first plurality of dielectric layers; a first via extending through the first substrate and one or more of the first plurality of dielectric layers; and a second via extending through the first substrate and two or more of the first plurality of dielectric layers, the second via extending through more of the first plurality of dielectric layers than the first via. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first semiconductor die comprising a first substrate; a first conductive via extending through the first semiconductor die; and a second conductive via extending partially through the first semiconductor die, the second conductive via extending through the first substrate. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of manufacturing a semiconductor device, the method comprising:
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providing a first substrate; forming one or more first dielectric layers over the first substrate; forming a first conductive via through the first substrate and the one or more first dielectric layers; forming a plurality of second dielectric layers over the one or more first dielectric layer and the first conductive via; and forming a second conductive via through the first substrate, the one or more first dielectric layers, and the plurality of second dielectric layers. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification