CAPACITORS USING PREFORMED DIELECTRIC

• US 20100226066A1
• Filed: 02/02/2010
• Published: 09/09/2010
• Est. Priority Date: 02/02/2009
• Status: Active Grant

• Current Assignee: Space Charge, LLC
• Original Assignee: Space Charge, LLC
• Inventors: Sweeney, Daniel C., Read, John B.
• Granted Patent: US 8,259,432 B2
• Time in Patent Office: Days
• US Class Current: 361/305
• CPC Class Codes: H01G 11/22 Electrodes
• CPC Class Codes: H01G 4/008 Selection of materials
• CPC Class Codes: H01G 4/01 Form of self-supporting electrodes
• CPC Class Codes: H01G 4/1209 characterised by the ceramic dielectric material H01G4/1272, H01G4/1281 take precedence
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

Devices for storing energy at a high density are described. The devices include a solid dielectric that is preformed to present a high exposed area onto which an electrode is formed. The dielectric material has a high dielectric constant (high relative permittivity) and a high breakdown voltage, allowing a high voltage difference between paired electrodes to effect a high stored energy density.

Claims

1. A storage capacitor comprising:

a dielectric structure having one or more intentionally textured surfaces having surface features in excess of 10 microns in height, wherein;

the dielectric structure comprises a dielectric material, and

the dielectric material has an effective relative permittivity greater than or about 500; and

two or more electrodes having a first electrode disposed on a first surface of the dielectric structure and a second electrode disposed on a second surface of the dielectric structure, wherein the second electrode is physically separated from the first electrode by the dielectric structure.

2. The storage capacitor of claim 1 wherein the dielectric material is a mixture of two or more dielectric materials.

3. The storage capacitor of claim 1, wherein the dielectric material is a perovskite material.

4. The storage capacitor of claim 1, wherein the dielectric material is flowable.

5. The storage capacitor of claim 1, wherein the dielectric material is sintered to form the dielectric structure.

6. The storage capacitor of claim 1, wherein the dielectric material is micro-injection molded to form the dielectric structure.

7. The storage capacitor of claim 1, wherein the dielectric material is micro-machined to form the dielectric structure.

8. The storage capacitor of claim 1, wherein the two or more electrodes are interleaved.

9. The storage capacitor of claim 1, wherein the two or more electrodes are geometrical in structure.

10. The storage capacitor of claim 1, wherein the two or more electrodes are tined.

11. The storage capacitor of claim 1, further comprising:

two or more layers, each layer having at least one dielectric structure and at least two electrodes.

12. The storage capacitor of claim 11, wherein the two or more layers are separated by spacers.

13. The storage capacitor of claim 1, wherein the two or more electrodes are connected to two or more leads.

14. A method of forming a storage capacitor, the method comprising:

providing a dielectric material having a relative permittivity greater than or about 500;

texturing one or more surfaces of the dielectric material; and

depositing a conductive material onto the two or more textured surfaces of the dielectric material.

15. The method of claim 14, wherein the texturing one or more surfaces of the dielectric structure comprises micro-machining the dielectric material.

16. The method of claim 14, wherein the texturing one or more surfaces of the dielectric structure comprises micro-injection molding the dielectric material.

17. The method of claim 14, wherein the conductive material is flowable.

18. The method of claim 14, wherein the dielectric material is flowable.

19. The method of claim 18, wherein the operation of texturing a surface of the dielectric material further comprises:

pouring the flowable dielectric material into a mold;

forming the flowable dielectric into a dielectric structure; and

converting the dielectric structure into solid dielectric structure.

20. The method of claim 19, further comprising:

heating the formed dielectric structure to a first temperature; and

heating the formed dielectric structure to a second temperature.

21. The method of claim 19, wherein the converting the flowable dielectric to a solid dielectric comprises curing the flowable dielectric.

22. The method of claim 19, wherein the converting the dielectric structure into a solid dielectric structure comprises annealing the flowable dielectric.

23. The method of claim 19, wherein the converting the dielectric structure into a solid dielectric comprises irradiating the flowable dielectric with ultraviolet light.