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FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM

  • US 20100227046A1
  • Filed: 02/26/2010
  • Published: 09/09/2010
  • Est. Priority Date: 03/04/2009
  • Status: Abandoned Application
First Claim
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1. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying to the substrate at least two kinds of reaction gases that react with each other to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising:

  • a susceptor rotatably provided in the chamber and having in one surface thereof a substrate receiving area in which the substrate is placed;

    a window portion hermetically provided to the chamber so that the window portion opposes the susceptor in the chamber;

    a film thickness measurement portion that optically measures a thickness of a film deposited on the substrate placed in the substrate receiving area, through the window portion;

    a first reaction gas supplying portion configured to supply a first reaction gas to the one surface;

    a second reaction gas supplying portion configured to supply a second reaction gas to the one surface, the second reaction gas supplying portion being separated from the first reaction gas supplying portion along a rotation direction of the susceptor;

    a separation area located along the rotation direction between a first process area in which the first reaction gas is supplied and a second process area in which the second reaction gas is supplied;

    a center area that is located substantially in a center portion of the chamber, configured to separate the first process area and the second process area, and has an ejection hole that ejects a first separation gas along the one surface; and

    an evacuation opening provided in the chamber in order to evacuate the chamber;

    wherein the separation area includes a separation gas supplying portion that supplies a second separation gas, and a ceiling surface that creates in relation to the one surface of the susceptor a thin space in which the second separation gas may flow from the separation area to the process area side in relation to the rotation direction.

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