METHOD AND SYSTEM FOR TUNING ADVANCED PROCESS CONTROL PARAMETERS
First Claim
1. A method of advanced process control (APC) for semiconductor fabrication, comprising:
- providing a present wafer to be processed by a semiconductor processing tool;
providing first data of previous wafers that have been processed by the semiconductor processing tool;
decoupling noise from the first data to generate second data;
evaluating an APC performance based on proximity of the second data to a target data;
determining a control parameter based on the APC performance; and
controlling the semiconductor processing tool with the control parameter to process the present wafer.
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Abstract
A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.
42 Citations
20 Claims
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1. A method of advanced process control (APC) for semiconductor fabrication, comprising:
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providing a present wafer to be processed by a semiconductor processing tool; providing first data of previous wafers that have been processed by the semiconductor processing tool; decoupling noise from the first data to generate second data; evaluating an APC performance based on proximity of the second data to a target data; determining a control parameter based on the APC performance; and controlling the semiconductor processing tool with the control parameter to process the present wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of advanced process control (APC) of an etching process, comprising:
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providing data of previous wafers that have undergone the etching process; removing an APC impact by a first modification of the data, the first modification isolating a chamber effect on the data, the chamber effect including a condition of an etching tool that can influence the etching process; removing a pre-stage effect by a second modification of the data, the pre-stage effect including an after-development-inspection process; determining an APC performance based on proximity of the modified data to a target data, the modified data including the first and second modifications of the data; determining a control parameter for the etching process based the APC performance; and controlling the etching process with the control parameter to process a present wafer. - View Dependent Claims (11, 12)
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13. An advanced process control (APC) system for controlling a semiconductor processing tool, comprising:
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memory operable to store first data of previous wafers that have been processed by the semiconductor processing tool; and a controller operable to control the semiconductor processing tool based on instructions that; decouple noise from the first data to generate a second data; evaluate an APC performance based on proximity of the second data to a target data; and determine a control parameter based on the APC performance; and control the semiconductor processing tool with the control parameter to process a present wafer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification