PLASMA PROCESSING APPARATUS

• US 20100230053A1
• Filed: 01/12/2010
• Published: 09/16/2010
• Est. Priority Date: 01/15/2009
• Status: Abandoned Application

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Inventors: NISHIO, Ryoji
• Application Number:
  US12/685,688
• Publication Number:
  US 20100230053A1
• Time in Patent Office: Days
• US Class Current: 156/345.490
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32678 Electron cyclotron resonance

Abstract

The invention provides a plasma processing apparatus for subjecting a sample to plasma processing by generating plasma within a vacuum processing chamber 1, wherein multiple sets (7, 7′) of high frequency induction antennas are disposed for forming an induction electric field that rotates in the right direction on an ECR plane of the magnetic field formed within the vacuum processing chamber 1, and plasma is generated via an electron cyclotron resonance (ECR) phenomenon. A Faraday shield 9 for blocking capacitive coupling and realizing inductive coupling between the high frequency induction antenna and plasma receives power supply via a matching box 46 from an output from a Faraday shield high frequency power supply 45 subjected to control of a phase controller 44 based on the monitoring of a phase detector 47-2. Multiple filters 49 short-circuit the high frequency voltage at various portions of the Faraday shield 9 to ground, thereby preventing the generation of an uneven voltage distribution having the same frequency as the plasma generating high frequency.

Claims

1. A plasma processing apparatus comprising a vacuum chamber constituting a vacuum processing chamber for storing a sample, a gas inlet for feeding processing gas into the vacuum processing chamber, a high frequency induction antenna for forming an induction electric field within the vacuum processing chamber, a magnetic field coil for forming a magnetic field in the vacuum processing chamber, a plasma generating high frequency power supply for supplying a high frequency current to the high frequency induction antenna, and a power supply for supplying power to the magnetic field coil for subjecting a sample to plasma processing by supplying the high frequency current from the high frequency power supply to the high frequency induction antenna and turning the gas supplied into the vacuum processing chamber to plasma;

wherein the vacuum processing chamber includes a vacuum processing chamber top member formed of a dielectric body airtightly fixed to an upper portion of the vacuum chamber, and a Faraday shield disposed between the high frequency induction antenna and the vacuum processing chamber;

the high frequency induction antenna is divided into n-numbers (integral number of n≧

2) of high frequency induction antenna elements, wherein the respective high frequency induction antenna elements are arranged tandemly, having a plurality of sets of tandemly arranged high frequency induction antenna elements, each high frequency induction antenna element of the respective sets of high frequency induction antenna having supplied thereto a high frequency current sequentially delayed by λ

(wavelength of the high frequency power supply)/n in order in a fixed direction, so that a rotating induction electric field E that rotates in a right direction with respect to the direction of magnetic field lines of a magnetic field B formed by supplying power to the magnetic field coil is formed by the high frequency current, the rotational frequency of the rotating induction electric field E corresponding to the electron cyclotron frequency via the magnetic field B, and a plurality of sets (the number of sets being a natural number of m≧

1) of high frequency induction antennas and the magnetic field are arranged so that a relationship of E×

B≠

0 is satisfied at an arbitrary portion between the induction electric field E and the magnetic field B to generate plasma, the plasma being used to subject the sample to plasma processing.

2. The plasma processing apparatus according to claim 1, wherein

the Faraday shield is structured to cover a whole body of the vacuum processing chamber top member.

3. The plasma processing apparatus according to claim 1, further comprising:

an electrode for holding a sample, a bias high frequency power supply for applying high frequency power to the electrode, a Faraday shield high frequency power supply for applying high frequency power to the Faraday shield, an oscillator for supplying high frequency to the bias high frequency power supply and the Faraday shield high frequency power supply, and a phase controller for controlling a phase difference between the bias high frequency power supply and the Faraday shield high frequency power supply.

4. The plasma processing apparatus according to claim 3, wherein

the frequency of the bias high frequency power supply is lower than the frequency of the plasma generating high frequency power supply.

5. The plasma processing apparatus according to claim 3, wherein

the Faraday shield is grounded via a plurality of filters, and an impedance between the Faraday shield and the ground potential is substantially 0Ω

when observed from the frequency of the plasma generating high frequency power supply, whereas the impedance is not substantially 0Ω

when observed from the frequency of the Faraday shield high frequency power supply.

6. The plasma processing apparatus according to claim 1, wherein

the Faraday shield has a structure composed of a first Faraday shield arranged close to the high frequency induction antenna and a second Faraday shield arranged close to the vacuum processing chamber top member.

7. The plasma processing apparatus according to claim 6, wherein

the first Faraday shield is arranged only at the circumference of the high frequency induction antenna.

8. The plasma processing apparatus according to claim 6, wherein

the second Faraday shield has a structure covering the whole body of the vacuum processing chamber top member.

9. The plasma processing apparatus according to claim 6, further comprising:

an electrode for holding a sample, a bias high frequency power supply for applying high frequency power to the electrode, a Faraday shield high frequency power supply for applying high frequency power to the second Faraday shield, an oscillator for supplying high frequency to the bias high frequency power supply and the Faraday shield high frequency power supply, and a phase controller for controlling a phase difference between the bias high frequency power supply and the Faraday shield high frequency power supply.

10. The plasma processing apparatus according to claim 9, wherein

the frequency of the bias high frequency power supply is lower than the frequency of the plasma generating high frequency power supply.

11. The plasma processing apparatus according to claim 9, wherein

the first Faraday shield is a ring-shaped conductor with slits, the whole circumference of which is grounded, and the impedance between the first Faraday shield and the ground potential is substantially 0Ω

when observed from the frequency of the plasma generating high frequency power supply.