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PHASE-CHANGE MEMORY ELEMENT AND METHOD FOR FABRICATING THE SAME

  • US 20100230653A1
  • Filed: 03/16/2009
  • Published: 09/16/2010
  • Est. Priority Date: 03/16/2009
  • Status: Active Grant
First Claim
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1. A phase-change memory element, comprisinga first electrode formed on a substrate;

  • a first dielectric layer, with an opening, formed on the first electrode, wherein the opening exposes a top surface of the first electrode;

    a pillar structure formed directly on the first electrode within the opening;

    an inner phase-change material layer surrounding the pillar structure, directly contacting the first electrode;

    a second dielectric layer surrounding the inner phase-change material layer;

    an outer phase-change material layer surrounding the second dielectric layer;

    a phase-change material collar formed between the second dielectric layer and the first electrode, connecting the inner phase-change material layer with the outer phase-change material layer; and

    a second electrode formed directly on the pillar structure, directly contacting the top surface of the inner phase-change material layer.

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