LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME

• US 20100230685A1
• Filed: 03/16/2010
• Published: 09/16/2010
• Est. Priority Date: 03/16/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: SONG, HYUN DON, CHO, HYUN KYONG, KIM, HYUNG GU, HONG, CHANG HEE
• Granted Patent: US 8,344,401 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

Provided are a light emitting device, a light emitting device package and a lighting system including the same. The light emitting device (LED) comprises a light emitting structure comprising a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer and a first electrode over the light emitting structure. A portion of the light emitting structure is sloped at a predetermined angle.

Claims

1. A light emitting device (LED) comprising:

a first semiconductor layer,

an active layer adjacent to the first semiconductor layer, and

a second semiconductor layer adjacent to the active layer, the first semiconductor layer being a first conductivity type and the second semiconductor being a second conductivity type;

a third semiconductor layer adjacent to the first semiconductor layer, the first semiconductor layer, the active layer, the second semiconductor layer and the third semiconductor layer being formed in a first direction, the third semiconductor having a planar surface in a second direction and facing the first semiconductor layer, the third semiconductor layer having at least one side surface which is inclined, and an angle of inclination of the at least one side surface of the third semiconductor layer is between the first direction and the second direction, at least one of the first semiconductor layer, the active layer, or the second semiconductor layer having a side surface with an angle of inclination which is greater than the angle of inclination of the at least one side surface of the third semiconductor layer, and the first and second directions are perpendicular to each other.

2. The LED of claim 1, wherein the angle of inclination is a range between 55°

˜

89°

3. The LED of claim 1, wherein the at least one side surface is a uniform surface or non-uniform surface.

4. The LED of claim 1, wherein the third semiconductor layer is an un-doped semiconductor layer.

5. The LED of claim 1, wherein the third semiconductor layer is doped semiconductor layer.

6. The LED of claim 5, wherein the doped semiconductor layer has a lightly doped semiconductor layer having a doping concentration of 1−

5×

10¹⁵ cm<sup>−

3</sup> or below.

7. The LED of claim 1, wherein the third semiconductor layer comprises an undoped-GaN layer.

8. The LED of claim 1, wherein the third semiconductor layer has a width greater than the first semiconductor layer.

9. The LED of claim 1, wherein a recess is formed in the third semiconductor layer, and a first electrode is provided in the recess.

10. The LED of claim 9, wherein the recess extends into the first semiconductor layer.

11. The LED of claim 9, wherein the height of the recess is greater than a thickness of the first electrode.

12. The LED of claim 1, comprising a second electrode adjacent to the second semiconductor layer.

13. The LED of claim 12, wherein the second electrode comprises at least one of an ohmic layer, a reflective layer, and a coupling layer.

14. The LED of claim 13, wherein the second electrode is formed of at least one of ITO, IZO(In—

ZnO), GZO(Ga—

ZnO), AZO(Al—

ZnO), AGZO(Al—

Ga ZnO), IGZO(In—

Ga ZnO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

15. A light emitting device (LED) package including the LED of claim 1, and including a package body to house the LED.

16. A lighting system including a light emitting module having the light emitting device (LED) package of claim 15.