Optoelectronic Semiconductor Body

• US 20100230698A1
• Filed: 08/27/2008
• Published: 09/16/2010
• Est. Priority Date: 09/28/2007
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Strassburg, Martin, Sabathil, Matthias, Hoeppel, Lutz, Engl, Karl, Rode, Patrick
• Granted Patent: US 8,362,506 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.

Claims

1. An optoelectronic semiconductor body, comprising

a substrate with a front side from which electromagnetic radiation is to be emitted;

a semiconductor layer sequence arranged at a rear side of the substrate, the semiconductor layer sequence having an active layer for generating the electromagnetic radiation;

a first and a second electrical connection layer arranged over a first surface of the semiconductor layer sequence that faces away from substrate.

2. The optoelectronic semiconductor body according to claim 1, wherein the substrate and the semiconductor layer sequence contain a nitride compound semiconductor.

3. The optoelectronic semiconductor body according to claim 2, wherein the substrate contains crystalline gallium nitride.

4. The optoelectronic semiconductor body according to claim 1, wherein the substrate comprises an auxiliary carrier arranged at the front side of the substrate, and wherein the semiconductor layer sequence contains a nitride compound semiconductor arranged on the rear side of the substrate.

5. The optoelectronic semiconductor body according to claim 4, wherein the auxiliary carrier contains crystalline aluminum oxide.

6. The optoelectronic semiconductor body according to claim 4, wherein a first main surface of the auxiliary carrier facing the semiconductor layer sequence comprises a structure.

7. The optoelectronic semiconductor body according to claim 4, wherein the substrate comprises a nucleation layer arranged on a first main surface of the auxiliary carrier facing the semiconductor layer sequence.

8. The optoelectronic semiconductor body according to claim 7, wherein the nucleation layer comprises a structure.

9. The optoelectronic semiconductor body according to claim 4, wherein the substrate comprises a buffer layer arranged over a first main surface of the auxiliary carrier facing the semiconductor layer sequence.

10. The optoelectronic semiconductor body according to claim 9, wherein the buffer layer comprises a structure.

11. The optoelectronic semiconductor body according to claim 1, further comprising an outcoupling structure overlying the front side of the substrate,

wherein an emission of the electromagnetic radiation from the front side of the substrate takes place through the outcoupling structure.

12. The optoelectronic semiconductor body according to claim 11, wherein the outcoupling structure comprises a microlens.

13. The optoelectronic semiconductor body according to claim 1, further comprising a mirror arranged on the first surface of the semiconductor layer sequence facing away from the substrate in order to reflect a portion of the electromagnetic radiation generated by the active layer.

14. The optoelectronic semiconductor body according to claim 13, wherein the mirror has at least one recess and the first electrical connection layer has an electrically conductive contact in the at least one recess to the semiconductor layer sequence.

15. The optoelectronic semiconductor body according to claim 13, wherein the mirror comprises a dielectric layer and a metal layer.

16. The optoelectronic semiconductor body according to claim 7, wherein the substrate comprises a buffer layer arranged on the nucleation layer

17. The optoelectronic semiconductor body according to claim 11, wherein the outcoupling structure comprises a diffractive optical element.

18. The optoelectronic semiconductor body according to claim 17, wherein the outcoupling structure comprises a photonic crystal.

19. The optoelectronic semiconductor body according to claim 17, wherein the outcoupling structure comprises a grating.