LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME

• US 20100230701A1
• Filed: 03/09/2010
• Published: 09/16/2010
• Est. Priority Date: 03/10/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KIM, Sun Kyung
• Granted Patent: US 8,384,104 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device, a light emitting device package and a lighting system including the same are provided. The light emitting device may include a light emitting structure, a dielectric pattern, a second electrode layer, and a resonator structure. The light emitting structure may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The dielectric pattern may be disposed on the second conductive type semiconductor layer. The second electrode layer may be disposed on the second conductive type comprising the dielectric pattern. The resonator structure may be disposed on the light emitting structure.

Claims

1. A light emitting device, comprising:

an electrode layer;

a dielectric pattern provided on the electrode layer; and

a light emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer provided over the dielectric pattern, wherein a distance between a bottom of portions of the first semiconductor layer provided over the dielectric pattern and the active layer is about 5×

λ

/n or less, wherein λ

is a centric wavelength of the active layer and n is a refractive index of the light emitting structure.

2. The light emitting device of claim 1, wherein the first semiconductor layer comprises a first conductive type semiconductor layer.

3. The light emitting device of claim 1, wherein a pattern of recesses is provided over the dielectric pattern.

4. The light emitting device of claim 3, wherein a horizontal width of the recesses is greater than a single mode transmission condition λ

/n.

5. The light emitting device of claim 3, further comprising an insulation layer on a side surface of the recess pattern.

6. The light emitting device of claim 3, further comprising a roughness pattern or a periodic unevenness on the recess pattern.

7. The light emitting device of claim 3, further comprising a reflection layer on a side surface of the recess pattern.

8. The light emitting device of claim 1, wherein a pattern of cylinders are provided over the dielectric pattern.

9. The light emitting device of claim 8, wherein a horizontal width of the cylinders is greater than a single mode transmission condition λ

/n.

10. The light emitting device of claim 8, further comprising an insulation layer on a side surface of the cylinder pattern.

11. The light emitting device of claim 8, further comprising a roughness pattern or a periodic unevenness on the cylinder pattern.

12. The light emitting device of claim 8, further comprising a reflection layer on a side surface of the cylinder pattern.

13. The light emitting device of claim 1, wherein the electrode layer comprises:

an ohmic layer;

a reflection layer; and

a substrate.

19. A light emitting device (LED) package comprising:

an LED of claim 1 or 14; and

a package body containing the LED.

20. A lighting system comprising a light emitting module including a light emitting device (LED) package of claim 19.

14. A light emitting device, comprising:

an electrode layer;

a dielectric pattern provided on the electrode layer; and

a light emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer provided over the dielectric pattern, wherein a distance between a bottom of a pattern provided in the first semiconductor layer over the dielectric pattern and the active layer is about 5×

λ

/n or less, wherein λ

is a centric wavelength of the active layer and n is a refractive index of the light emitting structure.

15. The light emitting device of claim 14, wherein the first semiconductor layer comprises a first conductive type semiconductor layer.

16. The light emitting device of claim 14, wherein a pattern of recesses is provided over the dielectric pattern.

17. The light emitting device of claim 14, wherein a pattern of cylinders is provided over the dielectric pattern.

18. The light emitting device of claim 14, wherein the electrode layer comprises:

an ohmic layer;

a reflection layer; and

a substrate.