LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING APPARATUS, AND LIGHTING SYSTEM

• US 20100230702A1
• Filed: 03/09/2010
• Published: 09/16/2010
• Est. Priority Date: 03/10/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Duk Hyun
• Granted Patent: US 8,637,884 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

Disclosed is a light emitting device including a conductive substrate; a reflective layer on the conductive substrate; an etching protective layer on a peripheral portion of a top surface of the conductive substrate; and a light emitting structure, which is formed on the reflective layer and the etching protective layer such that the etching protective layer is partially exposed and includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers, wherein the etching protective layer includes a first refractive layer having a first refractive index and a second refractive layer having a second refractive index greater than the first refractive index.

Claims

1. A light emitting device comprising:

a conductive substrate;

a reflective layer on the conductive substrate;

an etching protective layer on a peripheral portion of a top surface of the conductive substrate; and

a light emitting structure, which is formed on the reflective layer and the etching protective layer such that the etching protective layer is partially exposed and includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers,

wherein the etching protective layer includes a first refractive layer having a first refractive index and a second refractive layer having a second refractive index greater than the first refractive index.

2. The light emitting device of claim 1, wherein the etching protective layer overlaps with the conductive substrate and partially overlaps with the light emitting structure in a vertical direction.

3. The light emitting device of claim 1, wherein the first and second refractive layers are stacked alternately.

4. The light emitting device of claim 1, wherein the first refractive layer includes at least one of SiO₂ and Al₂O₃.

5. The light emitting device of claim 1, wherein the second refractive layer includes at least one of Si, Si—

H, Si₃N₄, SiN, TiO₂ and ZrO₂.

6. The light emitting device of claim 1, further comprising a seed layer or a bonding layer between the conductive substrate and the reflective layer.

7. The light emitting device of claim 1, further comprising at least one of an ohmic contact layer and an adhesive layer between the reflective layer and the light emitting structure.

8. The light emitting device of claim 1, further comprising a nitride semiconductor layer having a light extraction structure on the light emitting structure.

9. The light emitting device of claim 1, wherein at least two pairs of first and second refractive layers are provided.

10. The light emitting device of claim 1, wherein the first and second refractive layers have thickness of mλ

/4n respectively, in which λ

is a wavelength of light emitted from the light emitting structure, n is a refractive index of the first refractive layer or the second refractive layer, and m is an odd number.

11. The light emitting device of claim 1, wherein the first refractive layer is thicker than the second refractive layer.

12. A light emitting device package comprising:

a package body;

a light emitting device on the package body;

an electrode electrically connected to the light emitting device; and

an encapsulating layer surrounding the light emitting device,

wherein the light emitting device comprises;

a conductive substrate;

a reflective layer on the conductive substrate;

an etching protective layer on a peripheral portion of a top surface of the conductive substrate; and

a light emitting structure, which is formed on the reflective layer and the etching protective layer such that the etching protective layer is partially exposed,

wherein the etching protective layer includes a first refractive layer having a first refractive index and a second refractive layer having a second refractive index greater than the first refractive index.

13. A lighting system comprising:

a light emitting device package including a package body, alight emitting device on the package body, an electrode electrically connected to the light emitting device, and an encapsulating layer surrounding the light emitting device,

wherein the light emitting device comprises;

a conductive substrate;

a reflective layer on the conductive substrate;

an etching protective layer on a peripheral portion of a top surface of the conductive substrate; and

a light emitting structure, which is formed on the reflective layer and the etching protective layer such that the etching protective layer is partially exposed,

wherein the etching protective layer includes a first refractive layer having a first refractive index and a second refractive layer having a second refractive index greater than the first refractive index.