LIGHT EMITTING DEVICE FABRICATION METHOD THEREOF, AND LIGHT EMITTING APPARATUS

• US 20100230703A1
• Filed: 03/09/2010
• Published: 09/16/2010
• Est. Priority Date: 03/10/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: JEONG, Hwan Hee
• Granted Patent: US 8,049,241 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device is provided. The light emitting device comprises a conductive substrate, a reflection layer, a support layer, an ohmic contact layer, and a light emitting semiconductor layer. The reflection layer is disposed on the conductive substrate. The support layer is disposed partially on the reflection layer. The ohmic contact layer is disposed at the side of the support layer. The light emitting semiconductor layer is disposed on the ohmic contact layer and the support layer.

Claims

1. A light emitting device comprising:

a conductive substrate;

a reflection layer on the conductive substrate;

a support layer disposed partially on the reflection layer;

an ohmic contact layer at the side of the support layer; and

a light emitting semiconductor layer on the ohmic contact layer and the support layer.

2. The light emitting device according to claim 1, wherein a portion of the support layer adjacent to the reflection layer is wider than a portion of the support layer adjacent to the light emitting semiconductor layer.

3. The light emitting device according to claim 1, wherein a portion of the ohmic contact layer adjacent to the light emitting semiconductor layer is wider than a portion of the ohmic contact layer adjacent to the reflection layer.

4. The light emitting device according to claim 1, wherein the support layer is disposed at the side of the ohmic contact layer.

5. The light emitting device according to claim 1, wherein the support layer comprises GaN or Zn.

6. The light emitting device according to claim 1, wherein a portion of the reflection layer is disposed at the side of the support layer.

7. The light emitting device according to claim 1, wherein the support layer has a thickness of about 0.01 μ

m to about 0.5 μ

m and a width of about 0.01 μ

m to about 100 μ

m.

8. The light emitting device according to claim 1, wherein the support layer is irregularly plural.

9. The light emitting device according to claim 1, wherein the reflection layer contact both the support layer and the ohmic contact layer.

10. The light emitting device according to claim 1, further comprising an adhesion layer on the reflection layer.

11. The light emitting device according to claim 10, wherein the adhesion layer is disposed under and at the side of the support layer.

12. The light emitting device according to claim 10, wherein the adhesion layer contacts the ohmic contact layer.

13. The light emitting device according to claim 1, wherein the support layer has an inclined side surface.

14. The light emitting device according to claim 1, further comprising an electrode on the light emitting semiconductor layer.

15. The light emitting device according to claim 1, further comprising an etching protective layer having a portion disposed between the light emitting semiconductor layer and the conductive substrate.

16. A light emitting apparatus comprising:

a body;

a first electrode and a second electrode on the body;

a light emitting device connected electrically to the first electrode and the second electrode on the body; and

an encapsulation layer encapsulating the light emitting device,

wherein the light emitting device comprises;

a conductive substrate;

a reflection layer on the conductive substrate;

a support layer disposed partially on the reflection layer;

an ohmic contact layer at the side of the support layer; and

a light emitting semiconductor layer on the ohmic contact layer and the support layer.

17. The light emitting apparatus according to claim 16, wherein a portion of the support layer adjacent to the reflection layer is wider than a portion of the support layer adjacent to the light emitting semiconductor layer.

18. The light emitting apparatus according to claim 16, wherein the support layer is disposed at the side of the ohmic contact layer.

19. The light emitting apparatus according to claim 16, wherein the support layer comprises GaN or Zn.

20. The light emitting apparatus according to claim 16, wherein the support layer has a thickness of about 0.01 μ

m to about 0.5 μ

m and a width of about 0.01 μ

m to about 100 μ

m.