INTEGRATED CIRCUIT HAVING FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD
First Claim
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1. An integrated circuit, comprising:
- a first FET and a second FET,wherein at least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET,at least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively; and
a dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.
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Abstract
An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.
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Citations
24 Claims
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1. An integrated circuit, comprising:
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a first FET and a second FET, wherein at least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET, at least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively; and a dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit, comprising:
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a first FET and a second FET, wherein at least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET, and wherein at least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively; and wherein a dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel, the dopant concentration declining along the channel from the peak location to a pn junction between body and source. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of forming an integrated circuit, comprising:
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forming a first FET and a second FET; electrically connecting at least one of source, drain, gate of the first FET to the corresponding one of source, drain, gate of the second FET; and connecting at least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET to a circuit element, respectively; and wherein the formation of the first and second FET includes forming a body of each of the first and second FETs having a dopant concentration along a channel of the respective FET that includes a peak at a peak location within the channel. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. An integrated circuit comprising:
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a first FET coupled to a second FET; a doping concentration of a body along a channel of the first FET and the second FET configured to provide matching threshold voltages of the first FET and the second FET. - View Dependent Claims (24)
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Specification