TERMINATION FOR A SUPERJUNCTION DEVICE
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Abstract
A superjunction device that includes a termination region having a transition region adjacent the active region thereof, the transition region including a plurality of spaced columns.
47 Citations
21 Claims
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1. (canceled)
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2. A power semiconductor device comprising:
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a semiconductor body of first conductivity; an active region formed in said semiconductor body; and a termination region adjacent said active region, wherein said termination region comprises a first plurality of columns of a second conductivity positioned to form corners and a center of a hexagon, wherein each two adjacent columns and a column at said center of said hexagon form vertices of a first plurality of equilateral triangles, and wherein said first plurality of columns have substantially analogous resistivity. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for improving the breakdown at the termination of a superjunction power semiconductor device, said method comprising:
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forming an active region in said superjunction power semiconductor device; and forming a termination region adjacent to said active region of said superjunction power semiconductor device of first conductivity, wherein said termination region comprises a first plurality of columns of a second conductivity positioned to form corners and a center of a hexagon, wherein each two adjacent columns and a column at said center of said hexagon forms vertices of a first plurality of equilateral triangles, and wherein said first plurality of columns have substantially analogous resistivity. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification