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Semiconductor Device and Method of Stacking Same Size Semiconductor Die Electrically Connected Through Conductive Via Formed Around Periphery of the Die

  • US 20100233852A1
  • Filed: 05/27/2010
  • Published: 09/16/2010
  • Est. Priority Date: 05/04/2007
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a plurality of semiconductor die each having a plurality of bond pads formed over a surface of the semiconductor die;

    forming an insulating layer around a periphery of each semiconductor die;

    forming a plurality of conductive through-hole vias (THVs) through the insulating layer;

    forming a plurality of conductive traces over the surface of the semiconductor die electrically connected between the bond pads and conductive THVs;

    stacking the semiconductor die to electrically connect the conductive THVs between adjacent semiconductor die;

    providing a substrate or leadframe structure having an integrated cavity;

    mounting the stacked semiconductor die within a portion of the integrated cavity; and

    depositing an encapsulant over the substrate or leadframe structure and the semiconductor die.

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