Semiconductor Device and Method of Stacking Same Size Semiconductor Die Electrically Connected Through Conductive Via Formed Around Periphery of the Die
First Claim
1. A method of making a semiconductor device, comprising:
- providing a plurality of semiconductor die each having a plurality of bond pads formed over a surface of the semiconductor die;
forming an insulating layer around a periphery of each semiconductor die;
forming a plurality of conductive through-hole vias (THVs) through the insulating layer;
forming a plurality of conductive traces over the surface of the semiconductor die electrically connected between the bond pads and conductive THVs;
stacking the semiconductor die to electrically connect the conductive THVs between adjacent semiconductor die;
providing a substrate or leadframe structure having an integrated cavity;
mounting the stacked semiconductor die within a portion of the integrated cavity; and
depositing an encapsulant over the substrate or leadframe structure and the semiconductor die.
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0 Petitions
Accused Products
Abstract
A semiconductor device has a plurality of similar sized semiconductor die each with a plurality of bond pads formed over a surface of the semiconductor die. An insulating layer is formed around a periphery of each semiconductor die. A plurality of conductive THVs is formed through the insulating layer. A plurality of conductive traces is formed over the surface of the semiconductor die electrically connected between the bond pads and conductive THVs. The semiconductor die are stacked to electrically connect the conductive THVs between adjacent semiconductor die. The stacked semiconductor die are mounted within an integrated cavity of a substrate or leadframe structure. An encapsulant is deposited over the substrate or leadframe structure and the semiconductor die. A thermally conductive lid is formed over a surface of the substrate or leadframe structure. The stacked semiconductor die are attached to the thermally conductive lid.
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Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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providing a plurality of semiconductor die each having a plurality of bond pads formed over a surface of the semiconductor die; forming an insulating layer around a periphery of each semiconductor die; forming a plurality of conductive through-hole vias (THVs) through the insulating layer; forming a plurality of conductive traces over the surface of the semiconductor die electrically connected between the bond pads and conductive THVs; stacking the semiconductor die to electrically connect the conductive THVs between adjacent semiconductor die; providing a substrate or leadframe structure having an integrated cavity; mounting the stacked semiconductor die within a portion of the integrated cavity; and depositing an encapsulant over the substrate or leadframe structure and the semiconductor die. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, comprising:
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providing a plurality of semiconductor die each having a plurality of bond pads formed over a surface of the semiconductor die; forming an insulating layer around a periphery of each semiconductor die; forming a plurality of conductive vias through the insulating layer; forming a plurality of conductive traces over the surface of the semiconductor die electrically connected between the bond pads and conductive vias; stacking the semiconductor die to electrically connect the conductive vias between adjacent semiconductor die; and depositing an encapsulant over the semiconductor die. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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providing a plurality of semiconductor die each having a plurality of bond pads formed over a surface of the semiconductor die; forming an insulating layer around a periphery of each semiconductor die; forming a plurality of conductive vias through the insulating layer; stacking the semiconductor die to electrically connect the conductive vias between adjacent semiconductor die; and depositing an encapsulant over the semiconductor die. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A method of making a semiconductor device, comprising:
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providing first and second semiconductor die; forming an insulating layer around a periphery of the first and second semiconductor die; forming a plurality of conductive vias through the insulating layer of the first and second semiconductor die; stacking the first and second semiconductor die to electrically connect the conductive vias; and depositing an encapsulant over the first and second semiconductor die. - View Dependent Claims (22, 23, 24, 25)
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Specification