Dielectric Films Comprising Silicon And Methods For Making Same

• US 20100233886A1
• Filed: 03/04/2010
• Published: 09/16/2010
• Est. Priority Date: 03/13/2009
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Cuthill, Kirk Scott, Han, Bing, Xiao, Manchao, Yang, Liu, O'Neill, Mark Leonard
• Granted Patent: US 8,703,624 B2
• Time in Patent Office: Days
• US Class Current: 438/786
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Claims

1. A method for forming a dielectric film on at least one surface of a substrate, the method comprising:

providing the at least one surface of the substrate in a reaction chamber;

providing at least one silicon precursor selected from a silicon-containing precursor having the following formula I;

R¹₃Si—

R²—

SiR³₃ wherein R² is independently selected from an alkyl group, and an aryl group and wherein R¹ and R³ are each independently selected from H, an alkyl group, an aryl group, an alkenyl group, group, a halogen atom and an alkoxy group;

providing an oxygen source in a molecular amount less than a 1;

1 ratio to the silicon precursor; and

forming the dielectric film on the at least one surface by a deposition process chosen from a chemical vapor deposition process and an atomic layer deposition process.

2. The method of claim 1 wherein the at least one silicon precursor is selected from the group consisting of:

1,3-disilabutane and derivatives thereof;

1,4-disilabutane and derivatives thereof;

1,4-disilylbenzene and derivatives thereof;

1,3-disilylbenzene and derivatives thereof;

1,3-disilacyclobutane and derivatives thereof;

1,4-disilacyclohexane and derivatives thereof; and

combinations thereof.

3. The method of claim 1 wherein the at least one silicon precursor having Formula I comprises 1,4-disilabutane.

4. The method of claim 1 wherein the oxygen source comprises oxygen.

5. The method of claim 1 wherein the oxygen source comprises ozone.

6. The method of claim 1 wherein the dielectric film is selected from the group consisting of silicon oxide, silicon oxynitride, and silicon oxycarbide.

7. A method of forming a dielectric film comprising silicon oxide via an atomic layer deposition (ALD) process, the method comprising the steps of:

a. providing a substrate in an ALD reactor;

b. providing in the ALD reactor an at least one silicon precursor selected from a silicon-containing precursor having the following formula I;

R¹₃Si—

R²—

SiR³₃ wherein R² is independently selected from an alkyl group, and an aryl group and wherein R¹ and R³ are each independently selected from H, an alkyl group, an aryl group, an alkenyl group, a halogen atom, and an alkoxy group;

c. purging the ALD reactor with an inert gas;

d. providing an oxygen source in the ALD reactor, in a molecular amount less than a 1;

1 ratio to the silicon precursor;

e. purging the ALD reactor with an inert gas; and

f. repeating the steps b through e until a desired thickness of the dielectric film is obtained.

8. The method of claim 7 wherein the at least one silicon precursor is selected from the group consisting of:

1,3-disilabutane and derivatives thereof;

1,4-disilabutane and derivatives thereof;

1,4-disilylbenzene and derivatives thereof;

1,3-disilylbenzene and derivatives thereof;

1,3-disilacyclobutane and derivatives thereof;

1,4-disilacyclohexane and derivatives thereof; and

combinations thereof;

9. A method of forming a dielectric film comprising silicon oxide onto at least a surface of a substrate using a chemical vapor deposition (CVD) process, the method comprising:

a. providing a substrate in a reactor;

b. introducing into the CVD reactor an at least one silicon precursor selected from a silicon-containing precursor having the following formula I;

R¹₃Si—

R²—

SiR³₃ wherein R² is independently selected from an alkyl group, and an aryl group and wherein R¹ and R³ are each independently selected from H, an alkyl group, an aryl group, an alkenyl group, a halogen atom and an alkoxy group;

c. providing an oxygen source into the CVD reactor, in a molecular amount less than a 1;

1 ratio to the silicon precursor; and

,

d. forming the silicon oxide dielectric film on the at least one surface.

10. The method of claim 9 wherein the at least one silicon precursor is selected from the group consisting of:

1,3-disilabutane and derivatives thereof;

1,4-disilabutane and derivatives thereof;

1,4-disilylbenzene and derivatives thereof;

1,3-disilylbenzene and derivatives thereof;

1,3-disilacyclobutane and derivatives thereof;

1,4-disilacyclohexane and derivatives thereof; and

combinations thereof.