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NON-VOLATILE MEMORY GENERATING READ RECLAIM SIGNAL AND MEMORY SYSTEM

  • US 20100235713A1
  • Filed: 11/16/2009
  • Published: 09/16/2010
  • Est. Priority Date: 03/12/2009
  • Status: Abandoned Application
First Claim
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1. A non-volatile memory device comprising:

  • a memory cell array of nonvolatile memory cells arranged in a plurality of memory blocks;

    an error detection and correction (ECC) circuit configured to receive read data from the memory cell array and detect a number of error bits in the read data, wherein the ECC circuit is capable of detecting and correcting a maximum number of error bits;

    a counter configured to count a number of detected error bits in the read data and generate an error-possible data indication when a number of counted error bits exceeds a minimum error threshold, wherein the minimum error threshold is less than the maximum number of error bits; and

    a read reclaim indicator configured to receive the error-possible data indication and generate read reclaim indication for one of the plurality of memory blocks storing the read data.

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