SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a layer having a plurality of thin film transistors;
a source or drain electrode connected to a semiconductor film of the thin film transistor, the source or drain electrode being formed in a first opening;
a wiring connected to the source or drain electrode, the wiring being formed in a second opening potion provided between the thin film transistors;
a substrate; and
a conductive film provided over the substrate;
wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the thin film transistors and the substrate to each other.
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Accused Products
Abstract
It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
77 Citations
6 Claims
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1. A semiconductor device comprising:
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a layer having a plurality of thin film transistors; a source or drain electrode connected to a semiconductor film of the thin film transistor, the source or drain electrode being formed in a first opening; a wiring connected to the source or drain electrode, the wiring being formed in a second opening potion provided between the thin film transistors; a substrate; and a conductive film provided over the substrate; wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the thin film transistors and the substrate to each other. - View Dependent Claims (3, 5)
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2. A semiconductor device comprising:
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a layer having a plurality of thin film transistors; a source or drain electrode connected to a semiconductor film of the thin film transistor, the source or drain electrode being formed in a first opening; a wiring connected to the source or drain electrode, the wiring being formed in a plurality of second openings provided between the thin film transistors; a substrate; and a conductive film provided over the substrate; wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the thin film transistors and the substrate to each other. - View Dependent Claims (4, 6)
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Specification