THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE

• US 20100237355A1
• Filed: 11/10/2008
• Published: 09/23/2010
• Est. Priority Date: 11/15/2007
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kisdarjono, Hidayat, Saito, Yuichi, Moriguchi, Masao
• Application Number:
  US12/743,059
• Publication Number:
  US 20100237355A1
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate

Abstract

A thin film transistor with a large on-current and a reduced off-current is provided with high fabrication efficiency.

A thin film transistor of the present invention includes a gate electrode; and a microcrystalline silicon layer containing a microcrystalline silicon, the microcrystalline silicon layer having an upper surface and a lower surface which are parallel to a substrate surface and an end surface which extends between the upper surface and the lower surface; first and second contact layers containing impurities which are provided so as to be in contact with the microcrystalline silicon layer; a source electrode which is in contact with the first contact layer; and a drain electrode which is in contact with the second contact layer, wherein at least one of the first and second contact layers is in contact with the microcrystalline silicon layer only at the end surface without being in contact with any of the upper surface and the lower surface.

Claims

1. A thin film transistor which has a semiconductor layer containing a microcrystalline silicon, comprising:

a gate electrode;

a microcrystalline silicon layer containing a microcrystalline silicon, the microcrystalline silicon layer having an upper surface and a lower surface which are parallel to a substrate surface and an end surface which extends between the upper surface and the lower surface;

first and second contact layers containing impurities;

a source electrode which is in contact with the first contact layer; and

a drain electrode which is in contact with the second contact layer,

wherein at least one of the first and second contact layers is in contact with the microcrystalline silicon layer only at the end surface without being in contact with any of the upper surface and the lower surface.

2. The thin film transistor of claim 1, wherein at least part of the first and second contact layers extends over the microcrystalline silicon layer when seen in a direction perpendicular to the substrate surface.

3. The thin film transistor of claim 1, wherein part of the source electrode extends over the first contact layer, or part of the drain electrode extends over the second contact layer, when seen in a direction perpendicular to the substrate surface.

4. The thin film transistor of claim 1, wherein

the thin film transistor is a bottom gate type thin film transistor,

the first contact layer and a gate insulation layer are provided between the source electrode and the gate electrode, and

the second contact layer and a gate insulation layer are provided between the drain electrode and the gate electrode.

5. The thin film transistor of claim 1, wherein part of the microcrystalline silicon layer extends over the first contact layer or the second contact layer when seen in a direction perpendicular to the substrate surface.

6. The thin film transistor of claim 5, wherein

the thin film transistor is a top gate type thin film transistor, and

the part of the microcrystalline silicon layer extends over the first contact layer or the second contact layer with an insulating layer interposed therebetween.

7. The thin film transistor of claim 1, wherein the microcrystalline silicon layer includes a columnar crystal grown vertically to the substrate surface.

8. The thin film transistor of claim 7, wherein a cross section of the columnar crystal which is parallel to the substrate surface has a diameter not less than 5 nm and not more than 30 nm.

9. The thin film transistor of claim 1, wherein a crystallization rate of the microcrystalline silicon layer is 70% or more.

10. The thin film transistor of claim 1, wherein the microcrystalline silicon layer includes a void.

11. The thin film transistor of claim 1, wherein an infrared absorption spectrum of the microcrystalline silicon layer has a peak in a wave number range of not less than 2050 cm⁻

1 and not more than 2150 cm<sup>−

1</sup>.

12. The thin film transistor of claim 1, wherein each of the first and second contact layers includes an amorphous silicon layer which contains impurities and a microcrystalline silicon layer which contains impurities.

13. A display device comprising the thin film transistor of claim 1.

14. A method for fabricating a thin film transistor which has a semiconductor layer containing a microcrystalline silicon, the method comprising the steps of:

forming a gate electrode;

forming a microcrystalline silicon layer which contains a microcrystalline silicon;

forming first and second contact layers which contain impurities; and

forming a source electrode and a drain electrode so as to be in contact with the first and second contact layers, respectively,

wherein the microcrystalline silicon layer has an upper surface and a lower surface which are parallel to a substrate surface and an end surface which extends between the upper surface and the lower surface, and

at least one of the first and second contact layers and the microcrystalline silicon are formed so as to be in contact with each other only at the end surface of the microcrystalline silicon layer without having a contact at any of the upper surface and the lower surface.

15. The method of claim 14, wherein the step of forming the first and second contact layers includes

forming a layer of a silicon which contains impurities, and

reshaping the layer of the silicon which contains the impurities to form the first and second contact layers.

16. The method of claim 14, wherein

the thin film transistor is a bottom gate type thin film transistor,

the step of forming the gate electrode and the step of forming the microcrystalline silicon layer is performed before the step of forming the first and second contact layers, and

the first and second contact layers, the source electrode, and the drain electrode are formed by reshaping with the use of a single pattern.

17. The method of claim 14, wherein

the thin film transistor is a top gate type thin film transistor,

the step of forming the microcrystalline silicon layer, the step of forming the gate electrode, the step of forming the source electrode and the drain electrode is performed after the step of forming the first and second contact layers, and

the step of forming the first and second contact layers includes

forming a silicon film which contains impurities,

forming an insulating film on the silicon film, and

reshaping the silicon film and the insulating film with the use of a single pattern.

18. The method of claim 15 further comprising, before forming the layer of the silicon which contains the impurities, doping the microcrystalline silicon layer with impurities using a gas which contains phosphine (PH₃).

19. The method of claim 15, further comprising, after forming the layer of the silicon which contains the impurities, thermally treating the layer of the silicon which contains the impurities at a temperature not less than 250°

C. and not more than 320°

C.

20. The method of claim 14, wherein the step of forming the microcrystalline silicon layer includes

forming a microcrystalline silicon film by high-density plasma CVD, and

reshaping the microcrystalline silicon film to form the microcrystalline silicon layer.

21. The method of claim 20, wherein the step of forming the microcrystalline silicon film includes forming the microcrystalline silicon layer at a pressure not less than 0.133 Pa (pascal) and not more than 13.3 Pa.

22. The method of claim 20, wherein the microcrystalline silicon film is formed on a silicon nitride film after a hydrogen plasma treatment is performed on the silicon nitride film.