SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
1. A semiconductor device, comprising:
- a first MIS transistor formed in a first element formation region of a semiconductor substrate;
an isolation region formed in a trench provided in the semiconductor substrate to define the first element formation region;
a first high-dielectric-constant gate insulating film formed over the first element formation region and the isolation region; and
a first gate electrode formed on the first high-dielectric-constant gate insulating film, whereina first portion of the first high-dielectric-constant gate insulating film formed between a portion of the first gate electrode located in the trench and a side surface of the first element formation region contains a first metal, anda second portion of the first high-dielectric-constant gate insulating film formed between the first gate electrode and an upper surface of the first element formation region does not contain the first metal.
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Accused Products
Abstract
A semiconductor device includes a MIS transistor formed in a FET formation region of a semiconductor substrate, a silicon dioxide film formed in a trench provided in the semiconductor substrate to define the FET formation region, a gate insulating film formed over the FET formation region and the silicon dioxide film, and a gate electrode formed on the gate insulating film. The portion of the gate insulating film formed between the portion of the gate electrode located in the trench and the side surface of the semiconductor substrate contains aluminum, while the portion of the gate insulating film formed between the gate electrode and the upper surface of the semiconductor substrate does not contain aluminum.
29 Citations
20 Claims
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1. A semiconductor device, comprising:
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a first MIS transistor formed in a first element formation region of a semiconductor substrate; an isolation region formed in a trench provided in the semiconductor substrate to define the first element formation region; a first high-dielectric-constant gate insulating film formed over the first element formation region and the isolation region; and a first gate electrode formed on the first high-dielectric-constant gate insulating film, wherein a first portion of the first high-dielectric-constant gate insulating film formed between a portion of the first gate electrode located in the trench and a side surface of the first element formation region contains a first metal, and a second portion of the first high-dielectric-constant gate insulating film formed between the first gate electrode and an upper surface of the first element formation region does not contain the first metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for fabricating a semiconductor device comprising a first MIS transistor formed in a first element formation region of a semiconductor substrate, the method comprising the steps of:
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(a) forming a trench defining the first element formation region in the semiconductor substrate, and then forming an isolation region in the trench; (b) forming a first high-dielectric-constant gate insulating film over the first element formation region and the isolation region; (c) forming a first gate electrode on the first high-dielectric-constant gate insulating film; and (d) introducing a first metal into a first portion of the first high-dielectric-constant gate insulating film formed between a portion of the first gate electrode located in the trench and a side surface of the first element formation region, wherein, in the step (d), the first metal is not introduced into a second portion of the first-high-dielectric-constant gate insulating film formed between the first gate electrode and an upper surface of the first element formation region. - View Dependent Claims (20)
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Specification