MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY

• US 20100237449A1
• Filed: 10/28/2008
• Published: 09/23/2010
• Est. Priority Date: 11/05/2007
• Status: Active Grant

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Ohshima, Norikazu, Fukami, Shunsuke, Ishiwata, Nobuyuki, Suzuki, Tetsuhiro, Nagahara, Kiyokazu
• Granted Patent: US 8,174,086 B2
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1655 Bit-line or column circuits
• CPC Class Codes: G11C 11/1657 Word-line or row circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 19/0808 using magnetic domain propagation
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.

Claims

1. A magnetoresistive element, comprising:

a first magnetization free layer;

a second magnetization free layer;

a non-magnetic layer disposed adjacent to the second magnetization free layer; and

a first magnetization fixed layer disposed adjacent to said second magnetization free layer on an opposite side of said second magnetization free layer,

wherein said first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction,

wherein said second magnetization free layer and said first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction,

wherein said first magnetization free layer includes;

a first magnetization fixed region having a fixed magnetization;

a second magnetization fixed region having a fixed magnetization; and

a magnetization free region connected to said first and second magnetization fixed regions and having a reversible magnetization,

wherein said magnetization free region and said second magnetization free layer are magnetically coupled, and

wherein a center of mass of said magnetization free region and a center of mass of said second magnetization free layer are displaced in a particular in-plane direction.

2. The magnetoresistive element according to claim 1, wherein the magnetization of said first magnetization fixed layer is fixed in a direction approximately parallel to said particular direction.

3. The magnetoresistive element according to claim 1, further comprising:

a conduction layer disposed between said first and second magnetization free layers.

4. The magnetoresistive element according to claim 1, further comprising:

a second magnetization fixed layer coupled to one of said first and second magnetization fixed regions.

5. The magnetoresistive element according to claim 4, further comprising:

a third magnetization fixed layer coupled to the other of said first and second magnetization fixed regions.

6. The magnetoresistive element according to claim 1, wherein said first magnetization fixed region is disposed adjacent to one end of said magnetization free region, and

wherein aid second magnetization fixed region is disposed adjacent to the other end of said magnetization free region.

7. The magnetoresistive element according to claim 1, wherein said first magnetization fixed region is disposed adjacent to one end of said magnetization free region,

wherein said second magnetization fixed region is disposed adjacent to said one end of said magnetization free region, and

wherein said first magnetization fixed region, said second magnetization fixed region, and said magnetization free region form a junction of three elements.

8. The magnetoresistive element according to claim 3, wherein said conduction layer includes at least one element selected from the group consisting of Fe, Co and Ni.

9. The magnetoresistive element according to claim 1, wherein said non-magnetic layer includes MgO.

10. The magnetoresistive element according to claim 1, wherein at least one of said second magnetization free layer and said first magnetization fixed layer includes Co—

Fe—

B.

11. The magnetoresistive element according to claim 1, further comprising:

a branching prevention layer disposed between said first and second magnetization free layers.

12. The magnetoresistive element according to claim 3, further comprising:

a branching prevention layer disposed between said first magnetization free layer and said conduction layer.

13. The magnetoresistive element according to claim 11, wherein said branching prevention layer is formed of a film having a sheet resistance higher than that of said first magnetization free layer.

14. The magnetoresistive element according to claim 12, wherein said branching prevention layer is formed of a film having a sheet resistance higher than that of said first magnetization free layer.