IMAGING APPARATUS AND DRIVE METHOD OF SOLID-STATE IMAGING DEVICE

• US 20100238310A1
• Filed: 03/11/2010
• Published: 09/23/2010
• Est. Priority Date: 03/23/2009
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: SHIZUKUISHI, Makoto
• Application Number:
  US12/722,266
• Publication Number:
  US 20100238310A1
• Time in Patent Office: Days
• US Class Current: 348/220.100
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04N 23/667 Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
• CPC Class Codes: H04N 25/531 by controlling rolling shutters in CMOS SSIS
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

An imaging apparatus has a plurality of pixel sections. Each of the pixel sections contains a photoelectric conversion section, a floating diffusion layer FD for storing a charge and a transistor MT containing a gate electrode CG and a floating gate FG. The imaging apparatus includes a transistor LT being on-off controlled as a load transistor of the transistor MT and a control section for switching according to an image capturing mode, drive for injecting a charge responsive to a voltage supplied to the CG into the FG with the transistor LT turned off and reading a change in a threshold voltage of the transistor MT caused by the injected charge as an image capturing signal and drive for reading the voltage output from the transistor MT as an image capturing signal in response to the voltage supplied to the CG with the transistor LT turned on.

Claims

1. An imaging apparatus comprising:

a plurality of pixel sections that is arranged in a row direction and a column direction orthogonal to the row direction, each of the pixel sections including;

a photoelectric conversion section;

a first charge storage section which stores a charge occurring in the photoelectric conversion section; and

a first transistor which has a gate electrode connected to the first charge storage section and a second charge storage section provided between the gate electrode and a semiconductor substrate,

a second transistor that is on-off controlled as a load transistor of the first transistor;

a first signal read unit that injects a charge responsive to a voltage supplied to the gate electrode into the second charge storage section with the second transistor turned off and that reads a change in a threshold voltage of the first transistor caused by the injected charge as an image capturing signal; and

a second signal read unit that reads a voltage output from the first transistor as an image capturing signal in response to a voltage supplied to the gate electrode with the second transistor turned on.

2. The imaging apparatus according to claim 1, wherein

each of the pixel sections includes a reset transistor which resets the potential of the first charge storage section to a predetermined potential,

a reset drain voltage supply circuit supplies voltage to drains of the reset transistors separately for each pixel row composed of pixel sections arranged in the row direction, and

the reset drain voltage supply circuit supplies both reset voltage to reset the first charge storage sections and predetermined voltage to be applied to the gate electrodes to the drains.

3. The imaging apparatus according to claim 2, wherein

the first signal read unit (i) supplies read voltage to be applied to the gate electrodes to the drains by the reset drain voltage supply circuit so as to read changes in the threshold voltage of the first transistors with the reset transistors turned on and (ii) applies the read voltage to the gate electrodes through the first charge storage sections from the drains.

4. The imaging apparatus according to claim 3, further comprising:

a charge erase unit that draws out charges injected into the second charge storage sections into the semiconductor substrate and that erases the charges, wherein

the charge erase unit (i) supplies erase voltage to be applied to the gate electrodes to the drains by the reset drain voltage supply circuit so as to erase the charges injected into the second charge storage sections with the reset transistors turned on and (ii) applies the erase voltage to the gate electrodes through the first charge storage sections from the drains.

5. The imaging apparatus according to claim 1, wherein

each of the pixel sections comprises a transfer transistor which transfers the charge occurring in the photoelectric conversion section to the first charge storage section,

the first signal read unit (i) turns on the transfer transistors in all pixel sections at the same time and (ii) stores charges in the first charge storage sections at the same time and (iii) reads image capturing signals in sequence for each pixel row composed of pixel sections arranged in the row direction, and

the second signal read unit (i) turns on the transfer transistors and (ii) stores charges in the first charge storage sections and (iii) reads image capturing signals for each pixel row while the timing is shifted.

6. The imaging apparatus according to claim 1, wherein

at the moving image capturing time, an image capturing signal responsive to the charge occurring in the photoelectric conversion section during exposure for the moving image capturing is read by the second signal read unit, and

at the still image capturing time, an image capturing signal responsive to the charge occurring in the photoelectric conversion section during exposure for the still image capturing is read by the first signal read unit.

7. The imaging apparatus according to claim 6, wherein

when a still image capturing mode to capture a still image is set, moving image capturing is executed, and

when a command of still image capturing is given during the moving image capturing,

(i) still image capturing is executed,

(ii) the charge stored in the second charge storage section is erased after read termination of the image capturing signal by the still image capturing, and

(iii) the moving image capturing is restarted.

8. The imaging apparatus according to claim 1, wherein

the photoelectric conversion section and source region of the transistor and drain region of the transistor are formed in a semiconductor of the same conduction type.

9. The imaging apparatus according to claim 8, wherein

the semiconductor includes an n type.

10. The imaging apparatus according to claim 1, wherein

the first transistor has a MOS structure with a floating gate as the second charge storage section.

11. The imaging apparatus according to claim 1, wherein

the first transistor has a MONOS or MNOS structure with a nitride film as the second charge storage section.

12. A drive method of a solid-state imaging device including:

a plurality of pixel sections that is arranged in a row direction and a column direction orthogonal to the row direction, each of the pixel sections including;

a photoelectric conversion section;

a first charge storage section which stores a charge occurring in the photoelectric conversion section; and

a first transistor which has a gate electrode connected to the first charge storage section and a second charge storage section provided between the gate electrode and a semiconductor substrate,

the drive method comprising;

on-off controlling a second transistor as a load transistor of the first transistor;

injecting by a first signal read unit, a charge responsive to a voltage supplied to the gate electrode into the second charge storage section with the second transistor turned off;

reading by the first signal read unit, a change in a threshold voltage of the first transistor caused by the injected charge as an image capturing signal with the second transistor turned off; and

reading by a second signal read unit, a voltage output from the first transistor as an image capturing signal in response to a voltage supplied to the gate electrode with the second transistor turned on.

13. The drive method of the solid-state imaging device according to claim 12, wherein

each of the pixel sections includes a reset transistor which resets the potential of the first charge storage section to a predetermined potential, and

the drive method further comprising:

applying a read voltage to be applied to the gate electrodes to the gate electrodes through the first charge storage sections from drains of the reset transistors so as to read changes in the threshold voltage of the first transistors with the reset transistors turned on.

14. The drive method of the solid-state imaging device according to claim 13, further comprising:

applying an erase voltage to be applied to the gate electrodes to the gate electrodes through the first charge storage sections from the drains so as to erase the charge injected into the second charge storage sections;

drawing out the charge injected into the second charge storage sections into the semiconductor substrate; and

erasing the charge.

15. The drive method of the solid-state imaging device according to claim 12, wherein

each of the pixel sections comprises a transfer transistor which transfers the charge occurring in the photoelectric conversion section to the first charge storage section,

the drive method further comprises:

turning on by the first signal read unit, the transfer transistors in all pixel sections at the same time;

storing by the first signal read unit, charges in the first charge storage sections at the same time;

reading by the first signal read unit, image capturing signals in sequence for each pixel row composed of pixel sections arranged in the row direction;

turning on by the second signal read unit, the transfer transistors;

storing by the second signal read unit, charges in the first charge storage sections; and

reading by the second signal read unit, image capturing signals for each pixel row while the timing is shifted.

16. The drive method of the solid-state imaging device according to claim 12, wherein

reading by the second signal read unit, an image capturing signal responsive to the charge occurring in the photoelectric conversion section during exposure for the moving image capturing at the moving image capturing time, and

reading by the first signal read unit, an image capturing signal responsive to the charge occurring in the photoelectric conversion section during exposure for the still image capturing at the still image capturing time.

17. The drive method of the solid-state imaging device according to claim 16, wherein

executing moving image capturing when a still image capturing mode to capture a still image is set, and

when a command of still image capturing is given during the moving image capturing,

(i) executing still image capturing,

(ii) erasing the charge stored in the second charge storage section after read termination of the image capturing signal by the still image capturing, and

(iii) restarting the moving image capturing.