METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE
First Claim
1. A method of manufacturing a power semiconductor device, comprising the steps of:
- preparing a semiconductor substrate having one main surface and an other main surface, and including a first layer having a first conductivity type and located at a side of said one main surface;
forming a mask layer having a plurality of openings on said first layer;
forming a second layer having a second conductivity type different from said first conductivity type on said first layer by introducing impurities using said mask layer;
forming a third layer having said first conductivity type on said second layer by introducing impurities using said mask layer;
forming a trench extending through said second layer and said third layer to said first layer by carrying out etching using an etching mask including at least said mask layer;
forming a gate insulation film covering a sidewall of said trench; and
forming a trench gate filling said trench on said gate insulation film.
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Accused Products
Abstract
A mask layer having a plurality of openings is formed on the first layer. A second layer having a second conductivity type different from the first conductivity type is formed on the first layer by introducing impurities using the mask layer. A third layer having the first conductivity type is formed on the second layer by introducing impurities using the mask layer. A trench extending through the second layer and the third layer to the first layer is formed by carrying out etching using an etching mask including at least the mask layer. A gate insulation film covering a sidewall of the trench is formed. A trench gate filling the trench is formed on the gate insulation film.
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Citations
10 Claims
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1. A method of manufacturing a power semiconductor device, comprising the steps of:
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preparing a semiconductor substrate having one main surface and an other main surface, and including a first layer having a first conductivity type and located at a side of said one main surface; forming a mask layer having a plurality of openings on said first layer; forming a second layer having a second conductivity type different from said first conductivity type on said first layer by introducing impurities using said mask layer; forming a third layer having said first conductivity type on said second layer by introducing impurities using said mask layer; forming a trench extending through said second layer and said third layer to said first layer by carrying out etching using an etching mask including at least said mask layer; forming a gate insulation film covering a sidewall of said trench; and forming a trench gate filling said trench on said gate insulation film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification