FABRICATION METHOD FOR DEVICE STRUCTURE HAVING TRANSPARENT DIELECTRIC SUBSTRATE

• US 20100240195A1
• Filed: 05/13/2010
• Published: 09/23/2010
• Est. Priority Date: 11/18/2004
• Status: Active Grant

• Current Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Original Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Inventors: Taguchi, Takashi, Yabe, Sachiko, Nakamura, Toshiyuki, Machida, Satoshi
• Granted Patent: US 8,076,220 B2
• Time in Patent Office: Days
• US Class Current: 438/460
• CPC Class Codes: H01L 21/86 the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

Abstract

A semiconductor device has a transparent dielectric substrate such as a sapphire substrate. To enable fabrication equipment to detect the presence of the substrate optically, the back surface of the substrate is coated with a triple-layer light-reflecting film, preferably a film in which a silicon oxide or silicon nitride layer is sandwiched between polycrystalline silicon layers. This structure provides high reflectance with a combined film thickness of less than half a micrometer.

Claims

1. A method of fabricating a semiconductor integrated circuit chip comprising:

preparing a wafer including a dielectric substrate that is transparent to light and having a front surface and a back surface, a first film formed on the back surface of the dielectric substrate, a second film formed on the first film, a third film formed on the second film, and a fourth film formed on the front surface, the second film having a lower refractive index than the first and third films;

forming circuitry in and on the fourth film, and dicing the wafer into chips; and

illuminating the third film by sensing light for detection of the wafer, during said forming.

2. The method of claim 1, wherein the first, second and third films are formed to cover only selected parts of the dielectric substrate, so that the chips produced by the dicing do not include the first, second and third films.

3. The method of claim 2, wherein the selected parts are peripheral parts of the wafer.

4. The method of claim 1, wherein said preparing the wafer comprises:

preparing the dielectric substrate;

forming the first film on the back surface of the dielectric substrate;

forming the second film on the first film;

heating the second film; and

forming the third film on the heated second film.

5. The method of claim 1, wherein said preparing the wafer comprises:

preparing the dielectric substrate;

forming the first film on the back surface of the dielectric substrate;

forming the second film on the first film by heating the first film; and

forming the third film on the second film.

6. The method of claim 1, wherein the first, second, and third films have a combined thickness less than 0.5 μ

m.

7. The method of claim 1, wherein the first film comprises polysilicon, the second film comprises silicon oxide, and the third film includes polysilicon.

8. The method of claim 7, wherein the first film has a thickness of substantially 42 nm, the second film has a thickness of substantially 110 nm, and the third film has a thickness of substantially 42 nm.

9. The method of claim 8, wherein the dielectric substrate includes sapphire and the fourth film includes silicon, the method further comprising:

forming a fifth film on the fourth film, the fifth film including silicon oxide.

10. The method of claim 1, wherein the first film comprises polysilicon, the second film comprises silicon nitride, and the third film comprises polysilicon.

11. The method of claim 10, wherein the first film has a thickness of substantially 42 nm, the second film has a thickness of substantially 80 nm, and the third film has a thickness of substantially 42 nm.

12. The method of claim 1, wherein the dielectric substrate comprises a sapphire substrate.

13. The method of claim 1, wherein the fourth film comprises silicon.

14. The method of claim 13, further comprising forming a fifth film on the fourth film.

15. The method of claim 14, wherein the fourth film comprises silicon and the fifth film comprises silicon oxide.

16. The method of claim 1, wherein the dielectric substrate has side surfaces, the method further comprising forming a sixth film covering the side surfaces.

17. The method of claim 16, wherein the sixth film comprises polysilicon and silicon nitride.

18. The method of claim 17, wherein the sixth film also covers the back surface of the dielectric substrate, the sixth film disposed between the back surface and the first film.