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APPARATUS FOR SURFACE-TREATING WAFER USING HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA

  • US 20100243165A1
  • Filed: 11/01/2007
  • Published: 09/30/2010
  • Est. Priority Date: 11/01/2007
  • Status: Abandoned Application
First Claim
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1. An apparatus for surface-treating a wafer using high-frequency inductively-coupled plasma, comprising:

  • a process chamber including a plasma generation unit into which a reaction gas is introduced and which generates plasma, and a wafer treatment unit in which any one or more selected from among plasma treatment, thin film formation and etching is performed; and

    a pressure control unit including a vacuum plate, and a pumping port, a two-stage valve, a turbo pump and an APC valve which are organically connected with the vacuum plate, to control a pressure in the process chamber and a pumping rate.

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