APPARATUS FOR SURFACE-TREATING WAFER USING HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA
First Claim
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1. An apparatus for surface-treating a wafer using high-frequency inductively-coupled plasma, comprising:
- a process chamber including a plasma generation unit into which a reaction gas is introduced and which generates plasma, and a wafer treatment unit in which any one or more selected from among plasma treatment, thin film formation and etching is performed; and
a pressure control unit including a vacuum plate, and a pumping port, a two-stage valve, a turbo pump and an APC valve which are organically connected with the vacuum plate, to control a pressure in the process chamber and a pumping rate.
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Abstract
Disclosed herein is an apparatus for surface-treating a wafer using high-frequency inductively-coupled plasma, including a process chamber including a plasma generation unit into which a reaction gas is introduced and which generates plasma, and a wafer treatment unit in which any one or more selected from among plasma treatment, thin film formation and etching is performed; and a pressure control unit including a vacuum plate, and a pumping port, a two-stage valve, a turbo pump and an APC valve which are organically connected with the vacuum plate, to control a pressure in the process chamber and a pumping rate.
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10 Claims
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1. An apparatus for surface-treating a wafer using high-frequency inductively-coupled plasma, comprising:
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a process chamber including a plasma generation unit into which a reaction gas is introduced and which generates plasma, and a wafer treatment unit in which any one or more selected from among plasma treatment, thin film formation and etching is performed; and a pressure control unit including a vacuum plate, and a pumping port, a two-stage valve, a turbo pump and an APC valve which are organically connected with the vacuum plate, to control a pressure in the process chamber and a pumping rate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification