MICROBOLOMETER PIXEL AND FABRICATION METHOD UTILIZING ION IMPLANTATION
First Claim
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1. A method for manufacturing at least one microbolometer pixel comprising the steps of:
- providing a sacrificial layer over a substrate with at least one readout integrated circuit pad wherein a post is disposed between said at least one integrated circuit pad and a dielectric layer comprising at least one via to said post;
forming at least one VOx layer over said at least one via and said dielectric layer;
depositing a second dielectric layer on said VOx layer;
depositing an ion implant mask layer on said dielectric layer;
patterning said mask and etching said second dielectric layer leaving a protected sensing bridge region;
implanting ions whereby VOx of said VOx layer is converted to mixed phase vanadium oxide (VOx/V2O3/VO/V) and whereby electrical resistivity of unmasked area of said VOx layer is decreased.
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Abstract
A microbolometer pixel and a reduced-step process for manufacturing it comprising the step of ion implantation of vanadium oxide whereby VOx is converted to a low resistivity mixed phase vanadium oxide (VOx/V2O3/VO/V) in the leg, metallized support post, and detector contact areas. Masking maintains high temperature coefficient of resistance (TCR) VOx in the sensing portion of the pixel bridge region. The implanted area resistivity and TCR can be controlled by ion implantation dose and energy.
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Citations
20 Claims
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1. A method for manufacturing at least one microbolometer pixel comprising the steps of:
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providing a sacrificial layer over a substrate with at least one readout integrated circuit pad wherein a post is disposed between said at least one integrated circuit pad and a dielectric layer comprising at least one via to said post; forming at least one VOx layer over said at least one via and said dielectric layer; depositing a second dielectric layer on said VOx layer; depositing an ion implant mask layer on said dielectric layer; patterning said mask and etching said second dielectric layer leaving a protected sensing bridge region; implanting ions whereby VOx of said VOx layer is converted to mixed phase vanadium oxide (VOx/V2O3/VO/V) and whereby electrical resistivity of unmasked area of said VOx layer is decreased. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A microbolometer pixel comprising:
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a substrate with at least one adjacent readout integrated circuit pad wherein a post is disposed between said at least one circuit pad and a first dielectric layer, said first dielectric layer comprising at least one via to said post; a VOx bridge layer disposed between said first dielectric layer and a second dielectric layer in operational contact with said post through said via; a dielectric cap disposed on said second dielectric layer and said bridge layer; and wherein said bridge layer comprises an implanted area defined by implantation of ions. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing at least one microbolometer pixel comprising the steps of:
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providing a substrate with at least one readout integrated circuit pad operatively connected to at least one readout integrated circuit; depositing a sacrificial layer over said substrate; forming at least one metal-filled post between said at least one readout integrated circuit pad and a first dielectric layer; forming at least one via through said first dielectric layer to said at least one metal-filled post; forming at least one VOx layer over said first dielectric layer and filling said at least one via; depositing a second dielectric layer on said VOx layer; depositing an ion implant photoresist mask layer on said second dielectric layer; patterning said mask and etching said second dielectric layer leaving a protected microbolometer pixel bridge sensing region; implanting ions whereby VOx of said VOx layer is converted to mixed phase vanadium oxide (VOx/V2O3/VO/V) and electrical resistivity of desired area is decreased; removing said mask; depositing a capping dielectric layer over said microbolometer pixel region; defining leg, bridge and post areas by photolithography and etch; and removing said sacrificial layer to complete formation of said at least one microbolometer pixel. - View Dependent Claims (19, 20)
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Specification