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Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device

  • US 20100243988A1
  • Filed: 03/25/2010
  • Published: 09/30/2010
  • Est. Priority Date: 03/27/2009
  • Status: Active Grant
First Claim
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1. A nitride semiconductor light-emitting chip comprising:

  • a nitride semiconductor substrate having a principal growth plane; and

    a nitride semiconductor layer grown on the principal growth plane of the nitride semiconductor substrate, whereinthe principal growth plane is a plane having off-angles in both a- and c-axis directions relative to an m plane, andthe off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.

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