Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device
First Claim
1. A nitride semiconductor light-emitting chip comprising:
- a nitride semiconductor substrate having a principal growth plane; and
a nitride semiconductor layer grown on the principal growth plane of the nitride semiconductor substrate, whereinthe principal growth plane is a plane having off-angles in both a- and c-axis directions relative to an m plane, andthe off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.
2 Assignments
0 Petitions
Accused Products
Abstract
A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.
-
Citations
13 Claims
-
1. A nitride semiconductor light-emitting chip comprising:
-
a nitride semiconductor substrate having a principal growth plane; and a nitride semiconductor layer grown on the principal growth plane of the nitride semiconductor substrate, wherein the principal growth plane is a plane having off-angles in both a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 13)
-
-
9. A method of manufacture of a nitride semiconductor light-emitting chip, the method comprising:
-
a step of preparing a nitride semiconductor substrate having as a principal growth plane a plane having off-angles in both a- and c-axis directions relative to an m plane, the off-angle in the a-axis direction being larger than the off-angle in the c-axis direction; and a step of stacking, on the principal growth plane of the nitride semiconductor substrate, by an epitaxial growth method, a nitride semiconductor layer including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, wherein the step of stacking the nitride semiconductor layer includes a step of forming, from a nitride semiconductor substrate side, the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. - View Dependent Claims (10, 11, 12)
-
Specification