Semiconductor Device and Light-Emitting Device

• US 20100244003A1
• Filed: 03/19/2010
• Published: 09/30/2010
• Est. Priority Date: 11/02/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Abe, Hiroko, Seo, Satoshi, Yamazaki, Shunpei
• Granted Patent: US 8,174,178 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: G09G 2300/0847 being a dynamic memory without any storage capacitor, i.e. with use of parasitic capacitances as storage elements
• CPC Class Codes: G09G 2310/0248 Precharge or discharge of column electrodes before or after applying exact column voltages
• CPC Class Codes: G09G 2310/0251 Precharge or discharge of pixel before applying new pixel voltage
• CPC Class Codes: G09G 3/2022 using sub-frames
• CPC Class Codes: G09G 3/3258 with pixel circuitry controlling the voltage across the light-emitting element
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.

Claims

1-2. -2. (canceled)

3. A semiconductor device comprising:

a transistor;

an electrode electrically connected to the transistor and serving as an electrode of a light-emitting element, the electrode comprising a first layer and a second layer formed on the first layer; and

a partition layer covering an end portion of the electrode and having an opening portion to expose the second layer,

wherein the first layer comprises a conductive substance, and

wherein the second layer comprises a hole transporting substance and a substance showing electron accepting property to the hole transporting substance.

4. The semiconductor device according to claim 3, wherein the hole transporting substance is an aromatic amine compound.

5. The semiconductor device according to claim 3, wherein the second layer is 100 nm to 300 nm thick.

6. The semiconductor device according to claim 3, wherein the substance showing electron accepting property is one selected from molybdenum oxide, vanadium oxide and ruthenium oxide.

7. A semiconductor device comprising:

a transistor;

an electrode electrically connected to the transistor and serving as an electrode of a light-emitting element, the electrode comprising a first layer and a second layer formed on the first layer; and

a partition layer covering an end portion of the electrode and having an opening portion to expose the second layer,

wherein the first layer comprises a conductive substance, and

wherein the second layer comprises an electron transporting substance and a substance showing electron donating property to the electron transporting substance.

8. The semiconductor device according to claim 7, wherein the second layer is 100 nm to 300 nm thick.

9. The semiconductor device according to claim 7, wherein the substance showing electron donating property is one selected from lithium oxide, calcium oxide and magnesium oxide.

10-11. -11. (canceled)

12. A semiconductor device comprising:

a first transistor;

a first electrode electrically connected to the first transistor and serving as an electrode of a first light-emitting element;

a second transistor;

a second electrode electrically connected to the second transistor and serving as an electrode of a second light-emitting element, each of the first and second electrodes comprising a first layer and a second layer formed on the first layer; and

a partition layer covering an end portion of the first electrode and an end portion of the second electrode, the partition layer having at least a first opening portion to expose the second layer of the first electrode and a second opening portion to expose the second layer of the second electrode,

wherein the first layer comprises a conductive substance,

wherein the second layer comprises a hole transporting substance and a substance showing electron accepting property to the hole transporting substance, and

wherein an emission color of the first light-emitting element is different from an emission color of the second light-emitting element and a thickness of the second layer of the first electrode is different from a thickness of the second layer of the second electrode.

13. The semiconductor device according to claim 12, wherein the hole transporting substance is an aromatic amine compound.

14. The semiconductor device according to claim 12, wherein the second layer is is 100 nm to 300 mm thick.

15. The semiconductor device according to claim 12, wherein the substance showing electron accepting property is one selected from molybdenum oxide, vanadium oxide and ruthenium oxide.

16. A semiconductor device comprising:

a first transistor;

a first electrode electrically connected to the first transistor and serving as an electrode of a first light-emitting element;

a second transistor;

a second electrode electrically connected to the second transistor and serving as an electrode of a second light-emitting element, each of the first and second electrodes comprising a first layer and a second layer formed on the first layer; and

a partition layer covering an end portion of the first electrode and an end portion of the second electrode, the partition layer having at least a first opening portion to expose the second layer of the first electrode and a second opening portion to expose the second layer of the second electrode,

wherein the first layer comprises a conductive substance,

wherein the second layer comprises an electron transporting substance and a substance showing electron donating property to the electron transporting substance, and

wherein an emission color of the first light-emitting element is different from an emission color of the second light-emitting element and a thickness of the second layer of the first electrode electrode is different from a thickness of the second layer of the second electrode.

17. The semiconductor device according to claim 16, wherein the second layer is 100 nm to 300 nm thick.

18. The semiconductor device according to claim 16, wherein the substance showing electron donating property is one selected from lithium oxide, calcium oxide and magnesium oxide.

19-21. -21. (canceled)

22. A light-emitting device comprising:

a transistor;

a first electrode electrically connected to the transistor, the first electrode comprising a first layer and a second layer formed on the first layer;

a partition layer covering an end portion of the first electrode and having an opening portion to expose the second layer;

a light-emitting layer; and

a second electrode,

wherein the first layer comprises a conductive substance,

wherein the second layer comprises a hole transporting substance and a substance showing electron accepting property to the hole transporting substance, and

wherein the first electrode, the light-emitting layer and the second electrode are overlapped. overlapped.

23. The light-emitting device according to claim 22, wherein the hole transporting substance is an aromatic amine compound.

24. The semiconductor device according to claim 22, wherein the second layer is 100 nm to 300 nm thick.

25. The semiconductor device according to claim 22, wherein the substance showing electron accepting property is one selected from molybdenum oxide, vanadium oxide and ruthenium oxide.

26. An electronic device using the light-emitting device according to claim 22 in a display portion.

27. A light-emitting device comprising:

a transistor;

a first electrode electrically connected to the transistor, the first electrode comprising a first layer and a second layer formed on the first layer;

a partition layer covering an end portion of the first electrode and having an opening portion to expose the second layer;

a light-emitting layer; and

a second electrode,

wherein the first layer comprises a conductive substance,

wherein the second layer comprises an electron transporting substance and a substance showing electron donating property to the electron transporting substance, and

wherein the first electrode, the light-emitting layer and the second electrode are overlapped.

28. The semiconductor device according to claim 27, wherein the second layer is 100 nm to 300 nm thick.

29. An electronic device using the light-emitting device according to claim 27 in a display portion.

30. The semiconductor device according to claim 27, wherein the substance showing electron donating property is one selected from lithium oxide, calcium oxide and magnesium oxide.