SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a gate electrode over an insulating surface,an oxide semiconductor layer including silicon oxide;
an insulating layer between the gate electrode and the oxide semiconductor layer including silicon oxide; and
a source region and a drain region between the oxide semiconductor layer including silicon oxide and a source electrode layer and a drain electrode layer,wherein the source region and the drain region contain a degenerate oxide semiconductor material or a degenerate oxynitride material.
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Abstract
An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.
185 Citations
10 Claims
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1. A semiconductor device comprising:
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a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide; an insulating layer between the gate electrode and the oxide semiconductor layer including silicon oxide; and a source region and a drain region between the oxide semiconductor layer including silicon oxide and a source electrode layer and a drain electrode layer, wherein the source region and the drain region contain a degenerate oxide semiconductor material or a degenerate oxynitride material. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode over an insulating surface; forming an insulating layer over the gate electrode; forming an oxide semiconductor layer including silicon oxide over the insulating layer by a sputtering method using a first oxide semiconductor target including silicon oxide at 2.5 wt % to 20 wt % inclusive; and forming an oxynitride layer over the oxide semiconductor layer including silicon oxide in an atmosphere including nitrogen using a second oxide semiconductor target. - View Dependent Claims (7, 8)
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9. A method for manufacturing a semiconductor device comprising:
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forming an oxide semiconductor layer over an insulating surface by a sputtering method using a first oxide semiconductor target including silicon oxide at 2.5 wt % to 20 wt % inclusive; forming an oxynitride layer over the oxide semiconductor layer including silicon oxide by a sputtering method using a second oxide semiconductor target in an atmosphere including nitrogen; forming an insulating layer covering the oxynitride layer; and forming a gate electrode over the insulating layer. - View Dependent Claims (10)
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Specification