SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE

• US 20100244021A1
• Filed: 03/18/2010
• Published: 09/30/2010
• Est. Priority Date: 03/27/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Uochi, Hideki, Kawae, Daisuke
• Granted Patent: US 8,253,135 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.

Claims

1. A semiconductor device comprising:

a terminal electrode;

a wiring electrically connected to the terminal electrode;

an oxide semiconductor layer overlapping with the terminal electrode in a plane view;

an insulating layer provided between the terminal electrode and the oxide semiconductor layer in a cross-sectional view; and

a functional circuit to which a signal is inputted from the terminal electrode through the wiring and in which operation is controlled in accordance with the signal inputted.

3. The semiconductor device according to claim 1, wherein power supply voltage is applied to the oxide semiconductor layer.

7. The semiconductor device according to claim 1, wherein the functional circuit includes a semiconductor element using an oxide semiconductor layer.

2. A semiconductor device comprising:

a terminal electrode;

a wiring electrically connected to the terminal electrode;

an oxide semiconductor layer overlapping with the wiring in a plane view;

an insulating layer provided between the wiring and the oxide semiconductor layer in a cross-sectional view; and

a functional circuit to which a signal is inputted from the terminal electrode through the wiring and in which operation is controlled in accordance with the signal inputted.

4. The semiconductor device according to claim 2, wherein power supply voltage is applied to the oxide semiconductor layer.

8. The semiconductor device according to claim 2, wherein the functional circuit includes a semiconductor element using an oxide semiconductor layer.

5. A semiconductor device comprising:

a terminal electrode;

a first wiring;

a second wiring electrically connected to the terminal electrode;

an oxide semiconductor layer which is electrically connected to the second wiring and which overlaps with the first wiring in a plane view;

an insulating layer provided between the first wiring and the oxide semiconductor layer in a cross-sectional view; and

a functional circuit to which a signal is inputted from the terminal electrode through the second wiring and in which operation is controlled in accordance with the signal inputted.

6. The semiconductor device according to claim 5, wherein power supply voltage is applied to the first wiring.

9. The semiconductor device according to claim 5, wherein the functional circuit includes a semiconductor element using an oxide semiconductor layer.

10. A display device comprising:

a substrate;

a wiring provided over the substrate;

a first insulating layer provided over the substrate with the wiring interposed therebetween;

a first oxide semiconductor layer provided over the first insulating layer;

a second insulating layer provided over the first insulating layer with the first oxide semiconductor layer interposed therebetween;

a terminal electrode which is provided over the second insulating layer and is electrically connected to the wiring through an opening portion provided in the first insulating layer and the second insulating layer;

a driver circuit to which a signal is inputted from the terminal electrode through the wiring and in which operation is controlled in accordance with the signal inputted; and

a pixel whose operation is controlled by the driver circuit,

wherein the driver circuit and the pixel each include a transistor, and

wherein the transistor includes;

a gate electrode provided over the substrate;

a gate insulating layer provided over the substrate with the gate electrode interposed therebetween;

a source electrode and a drain electrode which are provided over the gate insulating layer;

a second oxide semiconductor layer which is provided over the gate electrode with the gate insulating layer interposed therebetween and is provided over the gate insulating layer with the source electrode and the drain electrode interposed therebetween;

a protective layer provided over the gate insulating layer with the source electrode, the drain electrode, and the second oxide semiconductor layer interposed therebetween; and

an electrode which is provided over the protective layer and is electrically connected to one of the source electrode and the drain electrode through an opening portion provided in the protective layer.

11. The display device according to claim 10, wherein the first oxide semiconductor layer is provided over the wiring with the first insulating layer interposed therebetween.

12. The display device according to claim 10, wherein the terminal electrode is provided over the first oxide semiconductor layer with the second insulating layer interposed therebetween.

13. The display device according to claim 10, wherein the first insulating layer is in a same layer as the gate insulating layer, and the second insulating layer is in a same layer as the protective layer.

14. An electronic appliance comprising the display device according to claim 10 in a display portion.

15. A method for manufacturing a display device comprising the steps of:

forming a first conductive film over a substrate and selectively etching the first conductive film to form a first conductive layer and a second conductive layer;

forming a first insulating layer over the substrate with the first conductive layer and the second conductive layer interposed therebetween and selectively etching the first insulating layer to expose part of the first conductive layer;

forming a second conductive film over the first insulating layer and selectively etching the second conductive film to form a third conductive layer and a fourth conductive layer;

forming an oxide semiconductor film over the first insulating layer with the third conductive layer and the fourth conductive layer interposed therebetween and selectively etching the oxide semiconductor film to form a first oxide semiconductor layer over the first insulating layer and to form a second oxide semiconductor layer over the second conductive layer with the second conductive layer, the third conductive layer, and the fourth conductive layer interposed therebetween;

forming a second insulating layer over the first insulating layer with the third conductive layer, the fourth conductive layer, the first oxide semiconductor layer, and the second oxide semiconductor layer interposed therebetween and selectively etching the second insulating layer to expose part of the first conductive layer and part of the fourth conductive layer; and

forming a third conductive film over the exposed part of the first conductive layer, the exposed part of the fourth conductive layer, and the second insulating layer and selectively etching the third conductive film to form a fifth conductive layer which is electrically connected to the first conductive layer and has a function as a terminal electrode and to form a sixth conductive layer electrically connected to the fourth conductive layer.

16. The method for manufacturing a display device, according to claim 15, wherein the first oxide semiconductor layer is formed over the first conductive layer with the first insulating layer interposed therebetween.

17. The method for manufacturing a display device, according to claim 15, wherein the terminal electrode is formed over the first oxide semiconductor layer with the second insulating layer interposed therebetween.