SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME
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Abstract
Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
36 Citations
19 Claims
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1-14. -14. (canceled)
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15. A semiconductor light emitting element for emitting light, comprising:
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a metal layer, multiple group-III nitride semiconductor layers located on the metal layer and having an active layer, a first principle surface with projections and a second principle surface facing the metal layer and located under the first principle surface; wherein the metal layer has approximately the same area as the second principle surface, and the distance between the active layer and the first principle surface is larger than the distance between the active layer and the second principle surface. - View Dependent Claims (16, 17, 18, 19)
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Specification